Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

Abstract

The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field.

Seed Production and Melt Replenishment for the Czochralski Growth of Silicon Germanium

“…The limit of growth is identied by a clearly notable striation in the crystal, and the material above this point is the frozen melt during cooling (freezing post experiment). The structure of the frozen melt section is consistent with that of previous experiments [25,26].…”

“…16. The radial concentration proles of the RMF samples maintain the relatively at prole of the baseline samples [26]. The radial concentration prole is not aected signicantly by the rotating magnetic eld although it leads to slightly more uniform radial compositions compared with those with no eld.…”

Effects of rotating magnetic fields on thermocapillary flow: Comparison of the infinite and the Φ1–Φ2 models

“…[19,20], the effects of the RMF and the combined magnetic fields in LPD are verified by experiments in Ref. [21].…”

Effects of rotating magnetic fields on thermocapillary flow in a floating half-zone

“…Therefore, numerous researchers have focused on RMF as a means for convection control in crystal growth [2][3][4][5][6][7][8][9]. In the literature, numerical simulations of RMF are classified into two RMF finite length models: the finite simplified model and the finite F 1 -F 2 model.…”

“…As the temperature gradient increases, the thermocapillary flow may lose hydrodynamic stability, which is detrimental to crystal quality. However, since semiconductor melt has excellent electrical conductivity, it is possible to apply external magnetic fields to control melt convection [1][2][3][4][5][6][7][8][9][10][11], and ultimately to improve the quality of growing crystal.…”