2000
DOI: 10.1103/physrevb.61.2613
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Silicon vacancy related defect in 4H and 6H SiC

Abstract: We report on an irradiation-induced photoluminescence ͑PL͒ band in 4H and 6H SiC and the corresponding optically detected magnetic resonance ͑ODMR͒ signals from this band. The deep PL band has the same number of no-phonon lines as there are inequivalent sites in the respective polytype. These lines are at 1352 and 1438 meV in the case of 4H and at 1366, 1398, and 1433 meV in the case of 6H. The intensity of the PL lines is reduced after a short anneal at 750°C. ODMR measurements with above-band-gap excitation … Show more

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Cited by 249 publications
(275 citation statements)
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“…Two characteristic lines at 861.4 and 916.3 nm are clearly visible for different irradiation fluences. These lines coincide with the V1 and V2 ZPLs 28 , proving that the PL originates from the V Si defects in 4H-SiC. These lines have different intensity, which may be due to their different polarization 14 as in our experiments we are sensitive to the dipoles, which are polarized perpendicular to the c axis of SiC.…”
Section: Resultssupporting
confidence: 64%
See 1 more Smart Citation
“…Two characteristic lines at 861.4 and 916.3 nm are clearly visible for different irradiation fluences. These lines coincide with the V1 and V2 ZPLs 28 , proving that the PL originates from the V Si defects in 4H-SiC. These lines have different intensity, which may be due to their different polarization 14 as in our experiments we are sensitive to the dipoles, which are polarized perpendicular to the c axis of SiC.…”
Section: Resultssupporting
confidence: 64%
“…At room temperature, the V Si defects emit in the NIR spectral range from 800 to 1,100 nm. At cryogenic temperatures, two distinct ZPLs at l ZPL ¼ 862 nm (V1) and l ZPL ¼ 917 nm (V2), associated with two different crystallographic sites in 4H-SiC, are observed in the photoluminescence (PL) spectrum 28 , which can be used as spectroscopic fingerprints of V Si .…”
Section: Resultsmentioning
confidence: 99%
“…2, signals of 865, 887, and 908 nm were clearly observed in the 1.7 MeV electron irradiated samples. These three PL signals are very similar to the V1, the V2, and the V3 peaks in Sörman et al [18] in the sense that: (i) the peak positions coincide well with each other; (ii) the intensities of the three peaks follow the same order, in which V3 has the highest intensity and V2 has the lowest; and (iii) the peak intensities increase with increasing irradiation dosage (with dosage lower than 10 17 cm ÿ2 [18]) and this implies the three peaks are associated with the electron irradiation. This leads us to conclude the three peaks observed in the 1.7 MeVelectron irradiated samples are V1, V2, and V3, and are thus related to the V Si defects at different equivalent sites as reported in Sörman et al [18].…”
Section: P H Y S I C a L R E V I E W L E T T E R S Week Ending 26 Marsupporting
confidence: 53%
“…With E e 200 keV, a 864.9 nm PL signal was observed. This signal was attributed to the V1 signal previously observed in Sörman et al [18] and Wagner et al [19] , in which the V1 (865 nm), V2 (887 nm), and the V3 (908 nm) signals were unambiguously related to the V Si defects at different equivalent sites. The observation of Steeds et al [16,17] contradicts with the findings of Rempel et al [11] (i.e., V Si was only created with E e 500 keV).…”
Section: P H Y S I C a L R E V I E W L E T T E R S Week Ending 26 Marmentioning
confidence: 96%
“…Among these qubits, silicon-vacancy related defects in hexagonal polytypes of SiC, such as 4H -and 6H -SiC, have shown favorable spin properties [13,14], demonstrated even at a single defect level at room temperature [4]. Two and three different silicon-vacancy related centers were observed in 4H -and 6H -SiC, where the corresponding photoluminescence (PL) lines are denoted as V1 and V2, and V1, V2, and V3, [15,16], respectively. The V2 line in 4H -SiC [4] and the V2 and V3 lines in 6H -SiC [13] are sufficiently strong to observe their corresponding electron spin via optically detected magnetic resonance (ODMR) measurements at room temperature.…”
mentioning
confidence: 99%