Silicon wafer oxygenation from SiO2 layers for radiation hard detectors

Fonseca, L.; Lozano, M.; Campabadal, F.; Martínez, C. Moreno; Ullán, M.; Avset, B.S.; Ruzin, A.; Lemeilleur, F.; Nossarzewska-Orłowska, E.

doi:10.1016/s0026-2714(99)00292-9

Cited by 16 publications

(6 citation statements)

References 2 publications

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“…The other half were diffused with oxygen to give a homogeneous concentration of ϳ10 17 cm −3 by heating for 24 h at 1200°C after growing a thermal oxide. 15,16 This type of material has been shown to increase the radiation tolerance of silicon radiation detectors 17 as a result of increasing the probability of vacancy-oxygen formation. 18,19 The samples for the luminescence and positron annihilation studies were irradiated to a nominal dose of 10 14 cm −2 .…”

Section: Technical Detailsmentioning

confidence: 99%

Radiation damage in silicon exposed to high-energy protons

et al. 2006

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Photoluminescence, infrared absorption, positron annihilation, and deep-level transient spectroscopy ͑DLTS͒ have been used to investigate the radiation damage produced by 24 GeV/ c protons in crystalline silicon. The irradiation doses and the concentrations of carbon and oxygen in the samples have been chosen to monitor the mobility of the damage products. Single vacancies ͑and self-interstitials͒ are introduced at the rate of ϳ1 cm −1 , and divacancies at 0.5 cm −1 . Stable di-interstitials are formed when two self-interstitials are displaced in one damage event, and they are mobile at room temperature. In the initial stages of annealing the evolution of the point defects can be understood mainly in terms of trapping at the impurities. However, the positron signal shows that about two orders of magnitude more vacancies are produced by the protons than are detected in the point defects. Damage clusters exist, and are largely removed by annealing at 700 to 800 K, when there is an associated loss of broad band emission between 850 and 1000 meV. The well-known W center is generated by restructuring within clusters, with a range of activation energies of about 1.3 to 1.6 eV, reflecting the disordered nature of the clusters. Comparison of the formation of the X centers in oxygenated and oxygen-lean samples suggests that the J defect may be interstitial related rather than vacancy related. To a large extent, the damage and annealing behavior may be factorized into point defects ͑monitored by sharp-line optical spectra and DLTS͒ and cluster defects ͑monitored by positron annihilation and broadband luminescence͒. Taking this view to the limit, the generation rates for the point defects are as predicted by simply taking the damage generated by the Coulomb interaction of the protons and Si nuclei.

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Section: Technical Detailsmentioning

confidence: 99%

Radiation damage in silicon exposed to high-energy protons

et al. 2006

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“…Then, the Rutherford backscattering spectrometry (RBS) technique was used in sputtering yield measurements by employing a 2‐MeV He + ion beam. This insulator material is very interesting in different technological applications related to the exploitation of radioactive nuclear installations, particularly, in analysis and detection devices operating in high radiation environments 13,14 . Experimental sputtering yield data in case of SiO 2 target material have been previously reported in literature by different authors 15–20 using thin films with different thicknesses and under the impact of various ion beams with several MeV incident energies.…”

Section: Introductionmentioning

confidence: 99%

Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

Boubir

Mammeri²,

Dib³

et al. 2021

Surface & Interface Analysis

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The sputtering of silicon dioxide (SiO2/Si) thin films deposited onto silicon substrates and irradiated by swift Auq+ heavy ions (q = +4 to +9) has been investigated both by experiment and via numerical modeling by varying the kinetic energy from 10 to 40 MeV. The induced sputtering yields were determined experimentally via the Rutherford backscattering spectrometry (RBS) technique using a 2‐MeV He+ ion beam. The obtained experimental results were first plotted versus the target electronic stopping power together with previous data available for the same projectile‐target system at high kinetic energies, indicating increased sputtering yields with increasing electronic energy loss. Then, the whole data were compared with numerical sputtering yield values derived both from the inelastic thermal spike model and the SRIM‐2013 simulation code by including, respectively, nonlinear elastic spikes and linear elastic collision cascades. A good agreement was observed between the measured sputtering yield data and i‐TS predicted values over higher incident energies used by using refined parameters of the ion slowing down with reduced thermophysical properties of the SiO2 thin film. Finally, the synergy between electronic and nuclear energy loss processes inducing sputtering at low incident energies was discussed through the comparison between experimental and numerical yield data.

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Section: Introductionmentioning

confidence: 99%

“…Many published works 3–25 have been devoted in the past to sputtering and surface state modifications induced in SiO 2 crystalline materials, where different kinds of surface and structural changes (hillocks, swelling, craters, crystallization and grain growth, amorphization) were readily observed 18–25 by various techniques, such as transmission electron (TEM) and atomic force (AFM) microscopies as well as characterized in microstructure using the X‐ray diffraction (XRD) spectroscopy. The observed surface and structural effects were found to be useful for a several number of applied fields, particularly, those of electronics and photonics associated to detection devices 1–3 . However, the correlation effects between the induced surface sputtering and the structural modifications in crystalline SiO 2 deposited on Si have not been systematically studied under swift heavy ion irradiation 10–12 .…”

Section: Introductionmentioning

confidence: 99%

“…Silicon dioxide (SiO 2 ) thin films under swift heavy ion irradiation have received extensive attention in recent years due to their potential use in different technological applications, particularly, in analysis and detection devices operating under high radiation environments and in nuclear facilities. [1][2][3] Also, studying the behavior of SiO 2 and some other insulators under swift heavy ion irradiation is very useful for better understanding the mechanisms of various ion-irradiation effects at the nanometric scale, such as simple atomic defects, latent tracks, nano-structuring, and surface sputtering. [4][5][6][7] All these irradiation effects induced under high-energy (MeV) ion impacts can be well described using the inelastic thermal spike (i-TS) model 8,9 by assuming that the kinetic energy of the incident heavy ion is deposited as dense electronic excitations along its trajectory.…”

Section: Introductionmentioning

confidence: 99%

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Sputtering and structural modifications induced in silicon dioxide (SiO₂) thin films under (10–40 MeV) Au^q+heavy ion irradiation

Mammeri,

Salhi,

Boubir

et al. 2023

Surface & Interface Analysis

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Surface sputtering and structural modifications induced in silicon dioxide thin films (SiO2/Si) deposited on silicon substrates and irradiated by swift (10–40 MeV) heavy Auq+ (q = +4, +6, +7, and +9) ions were investigated by grazing‐incidence X‐ray diffraction (GIXRD) spectroscopy, Rutherford backscattering (RBS) spectrometry and time‐of‐flight elastic recoil detection (ToF‐ERDA) technique. The GIXRD analysis of the as‐deposited and irradiated samples revealed increasing structural modifications of the SiO2 thin films under Auq+ ion impacts with increasing ion‐beam energy. The changes consisted of decreased grain sizes with increased strain accompanied by a phase transformation from crystalline to amorphous films. RBS analysis showed a decrease in the mean stoichiometric (O/Si) ratio from (2.2 ± 0.1) to (1.7 ± 0.1), due to preferential sputtering of oxygen, as the incident ion energy increased. The obtained RBS‐results were then completed by those of ToF‐ERDA analysis technique using a 40 MeV Au9+ heavy ion beam. The preferential sputtering yield ratios (YSi/YO) were determined experimentally both versus electronic stopping power and ion fluence. The obtained results were then compared to numerical values derived from the inelastic thermal spike (i‐TS) model, Sigmund's analytical formula and SRIM simulation code. A good agreement was observed between the measured preferential sputtering data and the i‐TS calculated values, when considering both nuclear elastic and electronic inelastic collision mechanisms. Besides, a close correlation is observed between the electronic stopping power dependent measured sputtering yields and the XRD peak intensity degradation per unit fluence. These observations suggest that the same mechanism of MeV heavy ion‐irradiation induced extended atomic disordering, occurs both in the case of structural modifications and surface sputtering. Finally, the obtained experimental results are discussed on the basis of the i‐TS model.

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Silicon wafer oxygenation from SiO2 layers for radiation hard detectors

Cited by 16 publications

References 2 publications

Radiation damage in silicon exposed to high-energy protons

Radiation damage in silicon exposed to high-energy protons

Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

Sputtering and structural modifications induced in silicon dioxide (SiO₂) thin films under (10–40 MeV) Au^q+heavy ion irradiation

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Silicon wafer oxygenation from SiO2 layers for radiation hard detectors

Cited by 16 publications

References 2 publications

Radiation damage in silicon exposed to high-energy protons

Radiation damage in silicon exposed to high-energy protons

Experimental study and thermal spike modeling of sputtering in SiO2 thin films under MeV Auq+ heavy ion irradiation

Sputtering and structural modifications induced in silicon dioxide (SiO2) thin films under (10–40 MeV) Auq+heavy ion irradiation

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Experimental study and thermal spike modeling of sputtering in SiO₂ thin films under MeV Au^q+ heavy ion irradiation

Sputtering and structural modifications induced in silicon dioxide (SiO₂) thin films under (10–40 MeV) Au^q+heavy ion irradiation