Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy

Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in silicon

“…Doping by diffusion is the main technology used for production of silicon crystals with moderate concentrations of EAIC double donors. In the present study, dopants were introduced from a solid or gas phase at high temperatures; see Supplemental Material [23] for details of the diffusion doping and obtained parameters of investigated samples [24][25][26][27]. A large number of samples have been characterized to improve the degree of statistical confidence, in addition to ascertaining whether different diffusion conditions and postdiffusion treatment exhibit detectable influence on the mean values of oscillator strengths of impurity transitions.…”

“…The higher the pressure of a dopant gas phase in the volume of a sealed volume at the diffusion temperature, the larger is the concentration of atomic chalcogen EAIC and also accompanying diatomic EAIC and impurity complexes. Postdiffusion treatment, such as annealing (A) and/or annealing plus quenching (AQ), of a doped sample modifies the partial concentrations of atomic and diatomic chalcogen EAIC [24][25][26][27]. Annealing at high temperature results in increased concentration of atomic Ch centers, while the concentration of diatomic Ch 2 centers is reduced.…”

Current-voltage characteristic and sheet resistances after annealing of femtosecond laser processed sulfur emitters for silicon solar cells

“…Of those impurities, we assume sulfur centers at lattice sites as the main source of donors. 32,38 The laser process induces intrinsic silicon defects, which, regarding crystallinity, entails a range from amorphous to microcrystalline silicon within the surface layer. 12,18 The dislocations and grain boundaries potentially getter diffusing impurities, in particular, sulfur.…”