Silver‐Adapted Diffusive Memristor Based on Organic Nitrogen‐Doped Graphene Oxide Quantum Dots (N‐GOQDs) for Artificial Biosynapse Applications

Abstract

Carbon‐based electronic devices are suitable candidates for bioinspired electronics due to their low cost, eco‐friendliness, mechanical flexibility, and compatibility with complementary metal‐oxide‐semiconductor technology. New types of materials such as graphene quantum dots (GQDs) have attracted attention in the search for new applications beyond solar cells and energy harvesting due to their superior properties such as elevated photoluminescence, high chemical inertness, and excellent biocompatibility. In this paper, a biocompatible/organic electronic synapse based on nitrogen‐doped graphene oxide quantum dots (N‐GOQDs) is reported, which exhibits threshold resistive switching via silver cation (Ag+) migration dynamics. In analogy to the calcium (Ca2+) ion dynamics of biological synapses, important biological synapse functions such as short‐term potentiation (STP), paired‐pulse facilitation, and transition from STP to long‐term plasticity behaviors are replicated. Long‐term depression behavior is also evaluated and specific spike‐timing dependent plasticity is assessed. In addition, elaborated switching mechanism of biosimilar Ag+ migration dynamics provides the potential for using N‐GOQD‐based artificial synapse in future biocompatible neuromorphic systems.

A Pure 2H‐MoS2 Nanosheet‐Based Memristor with Low Power Consumption and Linear Multilevel Storage for Artificial Synapse Emulator

“…Furthermore, in the LRS, there was a linear relationship (slope = 1.01) between ln(I) and ln(V) corresponding to the ohmic contact, as shown in Figure S10b, Supporting Information 53. This result is consistent with the typical conduction mechanism of an Ag filament model resistive switching physical mechanism 54–58. The formation process of Ag filament by an electrochemical reaction is depicted in Figure S11a–d, Supporting Information.…”

“…[53] This result is consistent with the typical conduction mechanism of an Ag filament model resistive switching physical mechanism. [54][55][56][57][58] The formation process of Ag filament by an electrochemical reaction is depicted in Figure S11a-d, Supporting Information. In order to further…”

Recent advances in organic‐based materials for resistive memory applications

“…Graphene is an elemental carbon allotrope with sp 2 configuration of a honeycomb crystal lattice in a single‐layer sheet, and it is regarded as the first member of 2D materials family. Since its discovery, graphene has undergone a rapid development and shown broad prospects in a variety of fields including batteries, sensors, field‐effect transistors, and optoelectronic devices 142‐150 . Notably, graphene‐based materials have also demonstrated as promising alternatives for resistive memory applications, thanks to its easy solution‐processing features, outstanding physical and chemical adjustability, 3D stacking capability, and possibility of obtaining heterostructures 51,151‐167 .…”

Flexible and Insoluble Artificial Synapses Based on Chemical Cross‐Linked Wool Keratin

“…STP and LTP are two typical types of synaptic plasticity, which are coincident with short-term memory and long-term memory processes in psychology. [38,54] STP can be transformed to LTP by constant stimulation. The module about the short-term memory and the long-term memory is shown in Figure S11, Supporting Information.…”