Silver alloy wire bonding

Kai, Liao; Hung, Liang Yi; Wu, L.; Chiang, Men Yeh; Jiang, Don Son; Huang, Ching‐Wen; Wang, Yu Po

doi:10.1109/ectc.2012.6248983

Cited by 38 publications

(32 citation statements)

References 5 publications

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“…Many claims on its advantages of moderate AgAl IMC formation and growth rate, and easier pluck-and-play for mass production are key success factors for Ag wire to replace Au or Cu wire bonding. Cho et al [18] reported that Pd alloying of the Ag wire was effective in improving the reliability of Ag ball bond. The lifetime in PCT increased with increasing Pd concentration in the Ag wire.…”

Section: Introductionmentioning

confidence: 99%

Extended reliability of gold and copper ball bonds in microelectronic packaging

Gan

Francis²,

Chan³

et al. 2013

Gold Bull

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Wire bonding is the predominant mode of interconnection in microelectronic packaging. Gold wire bonding has been refined again and again to retain control of interconnect technology due to its ease of workability and years of reliability data. Copper (Cu) wire bonding is well known for its advantages such as cost-effectiveness and better electrical conductivity in microelectronic packaging. However, extended reliabilities of Cu wire bonding are still unknown as of now. Extended reliabilities of Au and Pd-coated Cu (Cu) ball bonds are useful technical information for Au and Cu wire deployment in microelectronic packaging. This paper discusses the influence of wire type and mold compound effect on the package reliability and after several component reliability stress tests. Failure analysis has been conducted to identify its associated failure mechanisms after the package conditions for Au and Cu ball bonds. Extended reliabilities of both wire types are investigated after unbiased HAST (UHAST), temperature cycling (TC), and high-temperature storage life test (HTSL) at 150, 175, and 200°C aging temperatures. Weibull plots have been plotted for each reliability stress. Obviously, Au ball bond is found with longer time to failure in unbiased HAST stress compared to Cu ball bonds for both mold compounds. Cu wire exhibits equivalent package and or better reliability margin compared to Au ball bonds in TC and HTSL tests. Failure mechanisms of UHAST and TC have been proposed, and its mean time to failure (t 50 ), characteristic life (t 63.2 , η), and shape parameter (ß) have been discussed in this paper. Feasibility of silver (Ag) wire bonding deployment in microelectronic packaging is discussed at the last section in this paper.

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Section: Introductionmentioning

confidence: 99%

Extended reliability of gold and copper ball bonds in microelectronic packaging

Gan

Francis²,

Chan³

et al. 2013

Gold Bull

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“…However, the Ag-Al IMC phases reported are not conclusive. One research group indicated Ag 4 Al and Ag 2 Al phases [18] and others showed AgAl 2 , Ag 2 Al and Ag 3 Al phases at the Ag/Al interface [19,20]. Moreover, although many studies have reported the reliability test results of the Ag-Al wire bonds [18][19][20][21], the mechanical properties of the Ag-Al intermetallics are still unclear.…”

Section: Introductionmentioning

confidence: 99%

A study on intermetallic compound formation in Ag–Al system and evaluation of its mechanical properties by micro-indentation

Lee

2017

J Mater Sci: Mater Electron

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In electronic packaging in recent years, silver (Ag) alloy wires have been widely adopted in wire-bond processes. The bond pads on the device chips are mostly aluminum (Al). Thus, the bonding interface is mainly Ag-Al. In recent Ag alloy wirebond publications, it is unclear what intermetallic phases form at the interface. In this research, experiments were designed to understand the Ag-Al intermetallic compound (IMC) formation in the Ag-Al system and evaluate its mechanical properties. First, the Ag-Al alloys with compositions from 19 to 43 at.% Al were evaluated to identify the phase equilibrium and crystal structure of the Ag-Al intermetallic phases. Microstructures and phase compositions of the designed Ag-Al alloys are presented. To further study the intermetallic compound formation at the Ag/Al interface, the interfacial reaction of the Ag/Al joints at 200 °C was investigated. The µ-Ag 3 Al and δ-Ag 2 Al IMC were identified to form at the Ag/Al interface and stabilize after long-time annealing at 200 °C. At last, deformation and fracture behaviors of the bulk µ-Ag 3 Al and δ-Ag 2 Al were analyzed by the micro-indentation. The measured results reveal that µ-Ag 3 Al exhibits significantly higher hardness and lower fracture toughness as compared to δ-Ag 2 Al. Indentation crack propagation in µ-Ag 3 Al demonstrates the fracture characteristics of brittle materials. In the case of δ-Ag 2 Al, the presence of slip bands exhibits the ductility of δ-Ag 2 Al to endure plastic deformation prior to fracture. The effect of the mechanical properties of the µ-Ag 3 Al and δ-Ag 2 Al IMC on the Ag-Al joint reliability is discussed. New information obtained in this research is important for future study of the joint reliability and failure mechanism of Ag-Al wire bonds.

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“…Other, more exotic wire-pad combinations such as Pd-Al [13,14], Pt-Pt [15], Ni-SiC [16], Ag-Au [17], Ag-Al [18] and Ag-SiC [19] have been reported as well. Currently, the vendor Microbonds is alone in developing coated bond wires, an activity that started with XWire [20] and has continued with nano-metrically thin metallic coatings, although other efforts are known [21].…”

Section: Materials Used In Wire Bondingmentioning

confidence: 99%

Unconventional applications of wire bonding create opportunities for microsystem integration

Fischer

Korvink

Roxhed

et al. 2013

J. Micromech. Microeng.

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, G. et al. (2013) "Unconventional applications of wire bonding create opportunities for microsystem integration" Journal of Micromechanics and Microengineering, 23(8) Abstract. Automatic wire bonding is a highly mature, cost-efficient and broadly available back-end process, intended to create electrical interconnections in semiconductor chip packaging. Modern production wire bonding tools can bond wires with speeds of up to 30 bonds per second with placement accuracies of better than 2 µm, and the ability to form each wire individually into a desired shape. These features render wire bonding a versatile tool also for integrating wires in applications other than electrical interconnections. Wire bonding has been adapted and used to implement a variety of innovative microstructures. This paper reviews unconventional uses and applications of wire bonding that have been reported in the literature. The used wire bonding techniques and materials are discussed, and the implemented applications are presented. They include the realization and integration of coils, transformers, inductors, antennas, electrodes, through silicon vias (TSVs), plugs, liquid and vacuum seals, plastic fibers, shape memory alloy (SMA) actuators, energy harvesters, and sensors.

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Silver alloy wire bonding

Cited by 38 publications

References 5 publications

Extended reliability of gold and copper ball bonds in microelectronic packaging

Extended reliability of gold and copper ball bonds in microelectronic packaging

A study on intermetallic compound formation in Ag–Al system and evaluation of its mechanical properties by micro-indentation

Unconventional applications of wire bonding create opportunities for microsystem integration

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