Silver-indium joints produced at low temperature for high temperature devices

Chuang, Ricky W.; Lee, C.C.

doi:10.1109/tcapt.2002.801113

Cited by 105 publications

(40 citation statements)

References 10 publications

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“…Ga and In had also been used in SLID designs due to its low melting temperature. SLID joints made with Ag/In [9,10] and Cu/Ga [11,12] systems had been reported, where the IMC formation issue persists. A technique to eliminate the IMC region is to convert it into a solid solution phase by post-annealing, as demonstrated using the Ag/In system [13].…”

Section: Introductionmentioning

confidence: 99%

Low-pressure solid-state bonding technology using fine-grained silver foils for high-temperature electronics

Lee

2017

J Mater Sci

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A solid-state bonding technique using fine-grained silver (Ag) foils is presented. The Ag foils are manufactured using many runs of cold rolling and subsequent annealing processes to achieve the favorable microstructure. X-ray diffraction and pole figure measurement are performed to examine the crystal structure and grain orientations. Si chips are bonded to bare Cu substrates using the Ag foil as the bonding medium at 300°C in 0.1 torr vacuum assisted by 6.9 MPa static pressure, which is much lower than that used in conventional thermal compression bonding. Cross sections prepared by focus ion beam show clear bonding interfaces with only a few voids smaller than 100 nm. The bonded structures do not crack after cooling down to room temperature, indicating that the ductile Ag layer is able to manage the strain induced by the large coefficient of thermal expansion mismatch between Si and Cu. The average shear strength of as-bonded samples is 29 MPa. High-temperature storage tests are conducted, and slight increase in strength can be observed after 300°C aging. Fracture analyses show that the breakage occurs within the Ag foil rather than on the bonding interface. Transmission electron microscopy and energydispersive spectroscopy (TEM/EDX) are conducted for Ag/Cu interface after 200-h aging, and the result shows that slight diffusion proceeds during the aging. Since Ag has the highest electrical and thermal conductivities among metals, therefore the bonded structures reported in this paper probably represent the best possible design for high-temperature and high-power electronic packaging applications.

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Section: Introductionmentioning

confidence: 99%

Low-pressure solid-state bonding technology using fine-grained silver foils for high-temperature electronics

Lee

2017

J Mater Sci

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“…Furthermore, Ga has extremely low melting temperature, at 29.8°C, and Ag-Ga eutectic temperature is even lower, at 25°C. Therefore, it can be considered and to be explored as a new alternative method as transit liquid phase (TLP) bonding technique [55], using the Ag-Ga binary system. It could be a suitable candidate of low temperature (below 200°C) or even room temperature bonding technique for advanced microelectronics, micro-electro-mechanical-systems (MEMS) and optoelectronic devices [56].…”

Section: Discussionmentioning

confidence: 99%

Solid solution softening and enhanced ductility in concentrated FCC silver solid solution alloys

Huo

Lee

2018

Materials Science and Engineering: A

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“…[16][17][18][19] It was also shown that IMC formation strongly affects the bond strength of Ag-In joints. 20,21 Consequently, fundamental knowledge of the kinetics of Ag-In IMC formation is of utmost importance in order to predict and optimize their long-term stability.…”

Section: Introductionmentioning

confidence: 99%

Kinetics of intermetallic compound formation in thermally evaporated Ag-In bilayers

Rossi

Zotov

Mittemeijer

2016

Journal of Applied Physics

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The kinetics of intermetallic compound (IMC) formation in thermally evaporated Ag-In bilayers, with In on top of Ag, was investigated using X-ray diffractometry, applied to the surfaces of the bilayer specimens, as well as scanning electron microscopy, applied to cross-sections of the bilayer specimens, prepared by a focused ion beam instrument. IMC formation was followed at room temperature as well as at elevated temperatures of 50 °C, 60 °C, and 70 °C. Two distinct growth regimes were observed coinciding with the availability of pure In. The AgIn2 IMC nucleated initially, followed by nucleation of the Ag2In IMC. The growth of AgIn2 was found to be controlled by both diffusional processes as well as interfacial reactions. The growth of the Ag2In IMC is dominantly diffusion-controlled. An interdiffusion coefficient of D=1.1±3.9·10−4 cm2 s−1 exp(−60.5±9.2 kJ mol−1R−1T−1) was obtained for the Ag2In IMC. The observations were discussed in terms of the interplay of thermodynamic and kinetic constraints.

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Silver-indium joints produced at low temperature for high temperature devices

Cited by 105 publications

References 10 publications

Low-pressure solid-state bonding technology using fine-grained silver foils for high-temperature electronics

Low-pressure solid-state bonding technology using fine-grained silver foils for high-temperature electronics

Solid solution softening and enhanced ductility in concentrated FCC silver solid solution alloys

Kinetics of intermetallic compound formation in thermally evaporated Ag-In bilayers

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