Silver photodissolution in amorphous chalcogenide thin films

Ghrandi, R. El; Calas, J.; Galibert, G.; Avérous, M.

doi:10.1016/0040-6090(92)90926-3

Cited by 16 publications

(3 citation statements)

References 45 publications

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“…Many different studies have been utilized to give information about how Ag ions diffuse into the chalcogenide (Ch) layer-from electrical resistivity measurement, 8,9 optical transmittance measurement, 10 modified optical reflectivity measurement, [11][12][13] X-ray diffraction measurement, 14,15 to Rutherford backscattering (RBS). [16][17][18][19][20][21][22] Among these techniques, electrical resistivity and X-ray diffraction are good tools to evaluate the Ag thickness, but it is difficult to obtain information on the chalcogenide layer and the reaction layer through them. The optical transmittance and reflection measurements are also good techniques to find the time-dependent change in the selected layer.…”

Section: Introductionmentioning

confidence: 99%

Silver photodiffusion into Ge-rich amorphous germanium sulfide—neutron reflectivity study

Sakaguchi

Asaoka

Mitkova

2017

Journal of Applied Physics

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Silver diffuses into chalcogenide films upon light exposure, and the kinetics of photodiffusion has been a subject of various investigations because of the difficulties in the in situ determination of the time-dependent Ag reaction and diffusion development in the chalcogenide layers. In this paper, we report the results of time-resolved neutron reflectivity measurement of Ag/Ge 40 S 60 /Si substrates under light exposure to clarify the kinetics of Ag photodiffusion into Ge-rich Ge chalcogenides. It reveals that Ag ions diffuse all over the Ge chalcogenide host layer once Ag dissolves into the layer without forming a metastable reaction layer unlike the case of S-rich Ge chalcogenide such as Ge 20 S 80. The decay curve suggests that the Ag dissolution is determined by two types of Ag capturing chalcogen sites. Also, the observed relaxation time showed anomalous chalcogenide layer thickness dependence. This is attributed to an additional diffusion-driven accelerating factor, which is unique to the silver photodiffusion. Furthermore, we observed indicative changes in the formation of an inhomogeneous in-plane structure at the Ag/chalcogenide interface. This would be related to the nucleation and growth of the Ag-dissolved reaction product.

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Section: Introductionmentioning

confidence: 99%

Silver photodiffusion into Ge-rich amorphous germanium sulfide—neutron reflectivity study

Sakaguchi

Asaoka

Mitkova

2017

Journal of Applied Physics

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“…GeSe 4=2 . As a consequence of their structure Ag þ ions diffuse into glassy GeSe upon irradiation with UV light, electrons, and ions [23]. AgGeSe glasses belong to the fast ion conducting solids group (superionic conductors) [10].…”

Section: Introductionmentioning

confidence: 99%

Structural considerations about the (Ge0.25Se0.75)100−xAgx glasses

Piarristeguy¹,

Fontana²,

Arcondo³

2003

Journal of Non-Crystalline Solids

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“…[14] However, current practices for patterning ChG films still requires electron-beam lithography (EBL) to dope Ag into ChG with low throughput and high cost, thus hindering the attempt to explore new ChG-based nanostructures and devices. [15] Imprint lithography has been developed to form large-scale nanostructures, where a stamp or template with pre-defined patterns is molded into a thermal-or light-sensitive imprint resists over a substrate; and after the patterns are transferred from the template into imprint resist, the template is removed. [16][17][18] Because of their relatively low glass transition temperature, bulk ChG glasses can be easily molded using a stamp at an elevated temperature.…”

Section: Introductionmentioning

confidence: 99%

Chalcogenide Photonic Crystals Fabricated by Soft Imprint‐Assisted Photodoping of Silver

Qian

Dong

et al. 2020

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This work presents a low-cost, large-scale nanofabrication approach that combines Imprint Lithography and Silver Doping (IL-SD) to pattern chalcogenide glass (ChG) films for realizing infrared devices. The IL-SD method involves controlled photodoping of silver (Ag) atoms into ChG films and selective removing of undoped ChG. For photodoping of Ag atoms, an Ag-coated elastomer stamp is brought in contact with the ChG film and exposed to ultraviolet (UV) light, and subsequently, the Ag atoms are photo-dissolved into the ChG film following the nanopatterns on the elastomer stamp. Due to the high wet-etching selectivity of the undoped ChG to Ag-doped one, the ChG film can be precisely patterned with a spatial resolution on the order of a few tens of nanometers. Also, by controlling the lateral diffusion of Ag atoms during UV exposure, it is possible to adjust the size of the final patterns formed in the ChG film. As an application demonstration of the IL-SD process, the As 2 S 3 -based near-infrared (IR) photonic crystals (PhCs) in the wavelength range and flexible mid-IR PhCs are formed, and their optical resonances are investigated. The IL-SD process enables the low-cost fabrication of ChG nanostructures on different substrate materials and gives us a great promise to realize various infrared devices, such as optical integrated circuits, filters, and sensors.

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Silver photodissolution in amorphous chalcogenide thin films

Cited by 16 publications

References 45 publications

Silver photodiffusion into Ge-rich amorphous germanium sulfide—neutron reflectivity study

Silver photodiffusion into Ge-rich amorphous germanium sulfide—neutron reflectivity study

Structural considerations about the (Ge0.25Se0.75)100−xAgx glasses

Chalcogenide Photonic Crystals Fabricated by Soft Imprint‐Assisted Photodoping of Silver

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