Similarities and Particularities of Low‐ and High‐Temperature Plasma Technologies

Schumacher, U.

doi:10.1002/ppap.200600163

Cited by 3 publications

(1 citation statement)

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“…Low temperature, weakly collisional plasmas are present in a wide variety of plasmas such as industrial plasmas used for plasma processing of semiconductors and thin film deposition [1][2][3][4], near the boundary of satellites in space [5], and scrapeoff layers of fusion study plasmas [6]. In most situations more than one ion species is present.…”

Section: Introductionmentioning

confidence: 99%

Ion acoustic wave studies near the presheath/sheath boundary in a weakly collisional argon/xenon plasma

Öksüz¹,

Lee²,

Hershkowitz³

2007

Plasma Sources Sci. Technol.

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Ion acoustic wave (IAW) phase velocities are measured near the sheath/presheath boundary in a weakly collisional argon/xenon plasma. Wave profiles versus position are measured using a boxcar averager with a gate width of 30 ns and CW excitation at 50 or 75 kHz. Variable gate delays allow measurement of details of the wave close to the boundary. It is shown that the phase velocity at the presheath/sheath boundary is approximately twice the phase velocity in the bulk plasma for both argon and argon/xenon plasmas, in agreement with a recent calculation (Lee D et al 2007 Phys. Rev. Lett. 99 155004). This result indicates each ion's drift velocity at the boundary is equal to the IAW phase velocity in the bulk plasma.

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Section: Introductionmentioning

confidence: 99%

Ion acoustic wave studies near the presheath/sheath boundary in a weakly collisional argon/xenon plasma

Öksüz¹,

Lee²,

Hershkowitz³

2007

Plasma Sources Sci. Technol.

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Spectroscopic analysis of microwave generated plasmas

Leins

Schulz

Walker

et al. 2008

2008 IEEE 35th International Conference on Plasma Science

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Microwave generated plasmas present a simple and versatile tool for numerous plasma-technological applications. Detailed analysis of the plasma properties and of their temporal and spatial distributions is an important prerequisite for optimizing the process technology and the quality of the application as well. Examples among many others are the homogeneity, the permeability and the mechanical and electrical properties of deposited thin layers on numerous surfaces.Spectroscopy is offered to be a diagnostic method that does not disturb or change the plasma. From diagnosing absolute spectral line and continuum intensities or simply line intensity ratios many of the important plasma parameters as kind of species, species densities, electron density, temperatures of neutrals, ions and electrons can be explored. Among these the species ground state density as an important quantity can quantitatively be determined by "passive" emission and absorption spectroscopy of spectral lines with self absorption. This was first developed for the silicon ground state density in a plasma target interaction experiment by the spectral analysis of the silicon multiplet 3p 2 3 P -3p4s 3 P 0 in the ultraviolet spectral range at 251.611 nm.Because of the importance of carbon in plasma technological processes and their applications and in the boundary layers of magnetic fusion devices this method was also applied for the carbon ground state determination by analyzing the multiplet 2s 2 2p 2 -2s 2 2p( 2 P 0 )3s of carbon in the spectral range of 165.7 nm in the near VUV. The investigations of plasmas generated and heated by Electron Cyclotron Resonance (ECR) with microwaves of a frequency of 2.45 GHz at a power of 800 W resulted in ground state densities of about 10 18 m -3 of carbon. Several further spectroscopic results for the different analyses of temperatures and densities in microwave generated plasmas and torches will be presented.

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