SIMOX: processing, layer parameters design, and defects control

Li, Yupu; Marsh, C.D.; Nejim, A.; Chater, R.J.; Kilner, John A.; Hemment, P.L.F.

doi:10.1016/0168-583x(95)00043-7

Cited by 6 publications

(5 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…What is thus clear in this preliminary work is that the high dose, high temperature oxygen implantation, does not form continuous volumes of SiO 2 . In agreement with previous work [17], this should only be expected following postimplant annealing at around 1300…”

Section: Resultssupporting

confidence: 73%

“…• C. The postimplant anneal is essential in order to finalize oxide formation, as it stimulates oxygen diffusion and SiO 2 formation via Ostwald Ripening [17], while repairing lattice damage. By this mechanism, small faulty zones and precipitates tend to coalesce into bigger aggregations in order to achieve a more favorable energy configuration.…”

Section: Ion Implanted Grating Design and Considerationsmentioning

confidence: 99%

See 1 more Smart Citation

Optical Filters Utilizing Ion Implanted Bragg Gratings in SOI Waveguides

Bulk

Knights

Jessop

et al. 2008

Advances in Optical Technologies

View full text Add to dashboard Cite

The refractive index modulation associated with the implantation of oxygen or silicon into waveguides formed in silicon-oninsulator (SOI) has been investigated to determine the feasibility of producing planar, implantation induced Bragg grating optical filters. A two-dimensional coupled mode theory-based simulation suggests that relatively short grating lengths, on the order of a thousand microns, can exhibit sufficient wavelength suppression, of > 10 dB, using the implantation technique. Fabricated planar implanted slab-guided SOI waveguides demonstrated an extinction of −10 dB for TE modes and −6 dB for TM modes for the case of oxygen implantation. Extinctions of −5 dB and −2 dB have been demonstrated with silicon implantation.

show abstract

Section: Resultssupporting

confidence: 73%

Section: Ion Implanted Grating Design and Considerationsmentioning

confidence: 99%

Optical Filters Utilizing Ion Implanted Bragg Gratings in SOI Waveguides

Bulk

Knights

Jessop

et al. 2008

Advances in Optical Technologies

View full text Add to dashboard Cite

show abstract

“…Quantum dots were formed under various conditions [3,4]. Using very high ion fluences, buried layers were synthesized [5].…”

Section: Introductionmentioning

confidence: 99%

Template-directed self-assembly of buried nanowires and the pearling instability

Müller

Heinig

Schmidt

2002

Materials Science and Engineering: C

View full text Add to dashboard Cite

The fabrication of more and more miniaturized electronic and photonic devices relies on new, ingenious methods for the fabrication of spatially controlled nanostructures. Examples are electronic devices based on semiconducting nanowires and photonic devices based on chains of metallic nanoclusters that guide light by coupled surface plasmons. In this contribution a template-directed ion beam synthesis of nanowires and regular nanocluster chains will be presented. As templates, V-grooves etched in (001)Si and subsequently oxidized are used. High fluence Ge + implantation is carried out into the SiO2 layer at 70 keV. Thereby, the implanted Ge enriches themselves in the Vgroove bottom to a critical amount, which may result in nanowire formation by nucleation, growth and coalescence during subsequent thermal treatment. TEM investigations indicate the formation of a nanowire buried in the SiO2 at the V-groove bottom.Kinetic lattice Monte Carlo simulations of the nanowire formation process were performed in order to understand the phase separation mechanism and results are compared to TEM images. Furthermore, it is shown that even ideal nanowires show a instability and form during long-lasting annealing equal-spaced and equal-sized nanoclusters ("nanocluster chains") by self-organization.

show abstract

“…For example, high dose O ϩ implantation into Si wafers ͑500-700°C͒ followed by high-temperature annealing ͑1300-1405°C͒ has been used to produce Si film on buried SiO 2 substrates for advanced complementary metal-oxide semiconductor circuits. [1][2][3][4][5][6] Room-temperature implantation results in such a high level of irradiation damage in the top silicon layer that high quality silicon thin films cannot be made, even by high-temperature annealing. [1][2][3][4][5][6] This demonstrates the necessity for, and advantage of implantation at a high target temperature.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6] Room-temperature implantation results in such a high level of irradiation damage in the top silicon layer that high quality silicon thin films cannot be made, even by high-temperature annealing. [1][2][3][4][5][6] This demonstrates the necessity for, and advantage of implantation at a high target temperature. In a previous publication, 7 we reported some advantages and indirect evidence regarding dynamic annealing effects during high-temperature implantation of Ag ϩ into YBa 2 Cu 3 O 7Ϫ␦ ͑YBCO͒ oxide films.…”

Section: Introductionmentioning

confidence: 99%

Observation of dynamic annealing effects in oxide single crystals after high-dose18O+implantation at 500 °C

Liu

Chu

et al. 1998

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

Dynamic annealing effects and the behavior of oxygen trapping and migration in the perovskite oxide single crystals following high dose 18 O ϩ implantation at 500°C and at room temperature have been studied. We report that the cascade collision induced by room-temperature irradiation with 18 O ions ͑200 keV 5ϫ10 16 /cm 2 ͒ into SrTiO 3 single crystal induces an essentially amorphous (min Ϸ96%) surface layer to a depth of 400 nm. However, irradiation at 500°C results in dynamic annealing effects since ion channeling shows min of 3% in the near surface region. 18 O depth profiles measured by the 18 O(p,␣) 15 N nuclear reaction show that high-temperature implantation results in a flat-topped 18 O distribution with only 48% ͑compared with room-temperature implantation͒ of implanted 18 O retained, and more importantly, channeled nuclear reaction analysis shows that at least 77% of the retained 18 O occupies substitutional sites. Room-temperature implantation plus post-irradiation annealing at 500°C in flowing oxygen ambient resulted in much less recovery of irradiation damage ͑ min Ϸ33 to 72%͒. Similar effects were observed in 18 O implanted single crystal LaAlO 3. ͓S0163-1829͑98͒03510-3͔

show abstract

SIMOX: processing, layer parameters design, and defects control

Cited by 6 publications

References 13 publications

Optical Filters Utilizing Ion Implanted Bragg Gratings in SOI Waveguides

Optical Filters Utilizing Ion Implanted Bragg Gratings in SOI Waveguides

Template-directed self-assembly of buried nanowires and the pearling instability

Observation of dynamic annealing effects in oxide single crystals after high-dose18O+implantation at 500 °C

Contact Info

Product

Resources

About