Simple and Low-temperature Growth of High Thermal Performance W-Ti Co-Doped VO2 Films on a Scale Wafer

Abstract

There has been a long-standing challenge in promoting the fundamental research frontier in oxide electronics to commercial devices applications. Wafer-scale growth of high-performance oxide thin films is demanded urgently. In this paper, we successfully fabricated W-Ti co-doped VO 2 films with a pretty high coefficient of resistance (TCR: 7.09%/°C) and without hysteresis during heating and cooling processing. A scalable growth on 4 inch SiN x /Si wafer was obtained with excellent resistance uniformity (1σ = 2.14%), which has great potential in practical applications. The W-Ti co-doped effects exhibit the depression on the VO 2 phase change properties, which could be ascribed to the variation of the electronic phase in correlated VO 2 films. In addition, we employed V 2 O 3 films as a buffer layer to make all the films growth done at 275 °C , which is comfortable for low-cost industrial applications and semiconductor processing compatibility.

A calibratable sensory neuron based on epitaxial VO2 for spike-based neuromorphic multisensory system

“…Many methods have been adopted to synthesize high-quality VO 2 films, however, the growth of wafer-scale, high-quality VO 2 films with excellent phase transition property is still a challenge. To date, 2-inch epitaxial VO 2 film grown by molecular beam epitaxy was reported 44 , and preparation of large-scale VO 2 films by electron-beam evaporation 45 , thermal oxidation 46 , sol-gel method 47 , and sputtering 48 has also been reported. Nevertheless, the crystalline quality of the VO 2 film might be compromised in some preparation processes, and the growth method should be selected based on the detailed requirements on sample scale and crystalline quality in the applications.…”