Simple and Stable Single-Electron Logic Utilizing Tunnel-Junction Load

Abstract

A 6-dimensional grand unified theory with the compact space having the topology of a real projective plane, i.e., a 2-sphere with opposite points identified, is considered. The space is locally flat except for two conical singularities where the curvature is concentrated. One supersymmetry is preserved in the effective 4d theory. The unified gauge symmetry, for example SU(5) , is broken only by the non-trivial global topology. In contrast to the Hosotani mechanism, no adjoint Wilson-line modulus associated with this breaking appears. Since, locally, SU(5) remains a good symmetry everywhere, no UV-sensitive threshold corrections arise and SU(5)-violating local operators are forbidden. Doublettriplet splitting can be addressed in the context of a 6d N = 2 super Yang-Mills theory with gauge group SU(6). If this symmetry is first broken to SU(5) at a fixed point and then further reduced to the standard model group in the above non-local way, the two light Higgs doublets of the MSSM are predicted by the group-theoretical and geometrical structure of the model.

A simulator for single-electron tunnel devices and circuits based on simulated annealing

“…Neglecting the co-tunnelling effect, the hot electron effect, and quantum fluctuation (as is the case in all single-electron device and circuit simulators), the free energy F of a single-electron circuit is given by [6][7][8]:…”

“…This electron tunnelling process is suppressed if and only if the free energy of the circuit increases compared with that before tunnelling, i.e. if F > F. Therefore, the condition of Coulomb blockade of the tunnel junction j is given by [7]:…”

“…The simulator is applied to the two-stage tunnel junction inverter circuit proposed by Fukui et al [7]. This circuit is shown in Fig.…”

“…Currently, two simulation approaches have been implemented, the first approach is based on a master equation [4,6] and the second approach is based on a Monte Carlo method [7][8][9][10].…”

Quantum mechanical tunnelling in nanoelectronic circuits: Design of a nanoelectronic single-electron RAM

“…Several single-electron circuits have been recently proposed in the literature: single-electron memories [5 -9], inverters and pumps [10,11], majority gates [12 -13], logic gates [14,15], half adders [16] and adders [17].…”