Simple measurement of carrier induced refractive-index change in InGaAsP
            <i>pin</i>
            ridge waveguide structures

Schraud, G.; Müller, Gerhard; Stoll, L.; Wolff, U.

doi:10.1049/el:19910187

Cited by 21 publications

(5 citation statements)

References 7 publications

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“…10 The induced reflectance error can be calculated by ⌬R =4͑n r −1͒ / ͑n r +1͒ 3 ⌬n r ; a typical In-GaAsP QW high-bias carrier concentration of 2 ϫ 10 18 cm −3 will yield a refractive index variation ⌬n r of −0.02 and ⌬R / R = −0.008. 9,11 At I = 6 A, we measure ⌬R / R to be approximately 0.0058 in the QW region for the SCOWL and use this as a typical value. Accounting for spatial averaging ͑the QW region is only 40 nm of the 500 nm resolution͒, this would translate to an error in temperature measurement of 15% for the line of pixels directly on the QWs.…”

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Temperature mapping and thermal lensing in large-mode, high-power laser diodes

Chan

Pipe

Plant

et al. 2006

Applied Physics Letters

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The authors use high-resolution charge-coupled device based thermoreflectance to derive two dimensional facet temperature maps of a =1.55 m InGaAsP/InP watt-class laser that has a large 55 m2 fundamental optical mode. Recognizing that temperature rise in the laser will lead to refractive index increase, they use the measured temperature profiles as an input to a finite-element mode solver, predicting bias-dependent spatial mode behavior that agrees well with experimental observations. These results demonstrate the general usefulness of high-resolution thermal imaging for studying spatial mode dynamics in photonic devices. © 2006 American Institute of Physics. DOI: 10.1063/1.2388884 In semiconductor lasers, key parameters such as thresh-old current, efficiency, and wavelength are closely related to temperature. These dependencies are especially important for high-power lasers, in which device heating is the main cause of decreased performance and failure. Heat sources such as nonradiative recombination in the active region typically cause the temperature to be highly peaked within the device

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Temperature mapping and thermal lensing in large-mode, high-power laser diodes

Chan

Pipe

Plant

et al. 2006

Applied Physics Letters

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“…In addition, one needs to ensure that the material loss induced by carrier injection is much less than the transition rate η . For this purpose, we refer to [26][27] for some of the material considerations.…”

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confidence: 99%

Dynamic photonic structure for integrated photonics

Fan

2010

SPIE Proceedings

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Based on the effects of photonic transitions, we show that a linear, broadband and nonreciprocal on-chip optical isolation can be accomplished by dynamic refractive index modulations. Such scheme allows for on-chip optical isolation using standard CMOS fabrication process. We also show how to use photonic transition to create on-chip tunable resonance with quality factor and resonant separately controllable. OPTICAL ISOLATION CREATED BY PHOTONIC TRANSITIONSAchieving on-chip optical signal isolation is a fundamental difficulty in integrated photonics [1]. The need to overcome this difficulty, moreover, is becoming increasingly urgent, especially with the emergence of silicon nano-photonics [2][3], which promise to create on-chip optical systems at an unprecedented scale of integration. Until now, there have been no techniques that provide complete on-chip signal isolation using materials or processes that are fundamentally compatible with silicon CMOS process. Based on the effects of photonic transitions [4][5], here we show that a linear, broad-band, and non-reciprocal isolation can be accomplished by spatial-temporal refractive index modulations that simultaneously impart frequency and wavevector shifts during the photonic transition process. We further show that non-reciprocal effect can be accomplished in dynamically-modulated micron-scale ring-resonator structures. This work demonstrates that on-chip isolation can be accomplished with dynamic photonic structures, in standard material systems that are widely used for integrated optoelectronic applications. Figure 1. Schematic of indirect photonic transition in a silicon slab waveguide. (a) Bandstructure of a silicon waveguide. The width of the waveguide is 0.22 m μ . The angular frequency and wavevectors are normalized with respect to a=1 m μ . Red (Blue) dots indicate modes at frequency 1 ω ( 2 ω ) in the first (second) band. The arrows indicate frequency and wavevector shift as induced by a dynamic modulation shown in (b) and (c). (b) Structure of the silicon ( 12.25 s ε = ) waveguide. Modulation is applied to the dark region. (c) The modulation profile at twoInvited Paper Optoelectronic Integrated Circuits XII, edited by Louay A. Eldada, El-Hang Lee, Proc. of SPIE Vol. 7605, 76050O ·

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“…Constructive and destructive Fabry-Perot interferences were observed at the output of the waveguide, while a CW current was injected into the forwardbiased device, indicating a refractive index change. The effective refractive index change between two intensity maxima is Dn eff ¼ l/2L [5], where l is the transmitted wavelength and L the electrode length; the effective index takes into account the structure of the waveguide. Lightly tuning the current and the wavelength around a fringe, we found an increase of the index together with the injected current, which is, as expected, consistent with thermal effects [6].…”

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confidence: 99%