Simple Monte Carlo Simulator for Modelling Linear Mode and Geiger Mode
                        Avalanche Photodiodes in C++

Petticrew, Jonathan D.; Dimler, Simon J.; Ng, Jo Shien

doi:10.5334/jors.212

Cited by 6 publications

(5 citation statements)

References 10 publications

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“…Our model relies on the following proposition: a process defined by the SDE ( 6) or (7) has a probability density function, as defined in (5), that is a solution of the PDE defining the generalized drift-diffusion (3). Proof of this statement and of existence of such density function can be found in [19].…”

Section: Transport Modelmentioning

confidence: 99%

“…A great deal of effort has already been dedicated to finding accurate methods to simulate the SPAD operation and to extract reliable electrical characteristics of a given device architecture without the need of expensive and timeconsuming manufacturing and characterization. The state-ofthe-art methodologies rely on solving the Boltzmann transport equation (BTE) by means of particle Monte Carlo simulation in the phase-space, either under frozen field to investigate the details of avalanche process [5], [6] or self-consistently coupled to Poisson's equation to study all stages of SPAD operation [7]. This stochastic approach of transport can reproduce the statistical behavior of the SPAD, but it is known to be computationally very intensive, which makes it unsuitable for SPADs with sizes of several micrometers.…”

Section: Introductionmentioning

confidence: 99%

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A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Helleboid¹,

Rideau²,

Nicholson³

et al. 2022

J. Phys. D: Appl. Phys.

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We present an efﬁcient simulation method for electronic transport and avalanche in single-photon avalanche diodes (SPAD). Carrier transport is simulated in the real space using a particle Monte Carlo approach based on the Fokker-Planck point of view on an advection-diffusion equation, that enables us to reproduce mobility models, including electric ﬁelds and doping dependencies. The avalanche process is computed thanks to impact ionization rates implemented using a modiﬁed Random Path Length algorithm. Both transport and impact ionization mechanisms are computed concurrently from a statistical point of view, which allows us to achieve a full multi-particle simulation. This method provides accurate simulation of transport and avalanche process suitable for realistic three-dimensional SPADs, including all relevant stochastic aspects of these devices, together with a huge reduction of the computational time required, compared to standard Monte Carlo methods for charge carrier transport. The efﬁciency of our method empowers the possibility to precisely evaluate SPADs ﬁgures of merit and to explore new features that were untrackable by conventional methods. An extensive series of comparisons with experimental data on state-of-the art SPADs shows a very good accuracy of the proposed approach.

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Section: Transport Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Helleboid¹,

Rideau²,

Nicholson³

et al. 2022

J. Phys. D: Appl. Phys.

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“…For the sake of comparison, the multiplication factors for the same reverse bias values have been calculated also by the Simple Monte Carlo v1.11 (SMC, [19]) code originally developed to simulate single photon avalanche diodes and that uses a simplified band structure to reduce computational requirements. The parameters assumed by the simulator to solve the Poisson equation are specified in Section II.E.…”

Section: A Modeling the Impact Ionizationmentioning

confidence: 99%

On the use of Po210and Am241 collimated alpha sources for the characterization of the onset of carrier multiplication in power devices

Ciappa

Pocaterra

2020

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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The design of robust power devices and the definition of their safe operating area require the quantitative characterization of charge multiplication in reverse biased junctions. This is mandatory especially for those mechanisms like single event burnout, where the failure is triggered by the massive impact ionization arising in the reverse-biased device from the charge generated by the impinging ionizing radiation, transported and eventually multiplied. Traditional DC characterization techniques exhibit usually limited sensitivity, such that they are not capable to detect the reverse current and the related charge multiplication before the occurrence of the junction breakdown. In the past, alternative methods aimed to improve the sensitivity at lower electric fields have been proposed that exploit either optical, or particle beams. However, these solutions cannot be simply applied to real commercial devices and in addition they just deliver averaged values of the multiplication factor. In this paper, single ionization events generated at the close vicinity of the reverse-biased junction of a commercial power PiN diode are acquired to measure the distribution of the multiplication factor at different reverse bias conditions. Here, the fast reverse current pulse produced by the initial ionization charge burst is collected by a dedicated spectrometry chain and processed to obtain the probability distribution of the current pulses and the related multiplication factor. This analysis accounts for the stochastic nature of the initial charge generation, as well as of the impact ionization process. The measurements results are compared with the multiplication values and distributions as obtained by TCAD, analytical models and by Monte Carlo simulation. The performance of two different exempt quantity alpha sources is investigated, namely Polonium (Po 210) and Americium (Am 241) that are used in conjunction with dedicated collimators. The technique is demonstrated based on a commercial 1.2 kV-70 A power PiN diode in the reverse bias range from 700 V to 1250 V. Detailed information is provided about the proposed hardware solutions, which can easily be implemented under usual laboratory conditions.

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“…All, except [18], were validated against only a single In 0.53 Ga 0.47 As/InP APD design. A Simple Monte Carlo (SMC) model for the impact ionization process, first reported in 1999 [19], has recently been made available [20], with parameter files published for a range of avalanche materials including Si [21]. The SMC model is far less computationally intensive compared to Analytical and Full Band Monte Carlo models [22], [23], whilst incorporating sufficient impact ionization statistics (including dead space effects) to simulate a wide range of APD/SPAD designs, e.g., with thin avalanche regions and/or rapidly varying electric field profiles.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper we present an SMC parameter set for InP at 150 to 300 K, for use with our SMC simulator [20]. We comprehensively validated against a range of experimental data, including material characteristics such as saturation velocities, impact ionization coefficients for electrons and holes (α and β), as well as device characteristics such as M(V) and F(M) from multiple APD structures.…”

Section: Introductionmentioning

confidence: 99%

Modeling Temperature-Dependent Avalanche Characteristics of InP

Petticrew

Dimler

Tan

et al. 2020

J. Lightwave Technol.

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Avalanche photodiodes (APDs), and single photon avalanche diodes (SPADs), with InP avalanche regions and In-GaAs absorption regions, are used for detecting weak infrared light at ∼1.55 µm wavelength. These devices are often cooled to below room temperature during operation yet both validated simulation models and impact ionization coefficients that accurately describe the avalanche characteristics of InP are lacking in the temperature range of interest (200 K to room temperature). In this article we present an accessible, validated temperature dependent simulation model for InP APDs/SPADs. The model is capable of simulating avalanche gain, excess noise, breakdown voltage, and impulse current at 150-300 K. Temperature dependent ionization coefficients in InP, which may be used with other APD/SPAD simulation models, are also presented. The data reported in this article is available from the ORDA digital repository

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Simple Monte Carlo Simulator for Modelling Linear Mode and Geiger Mode Avalanche Photodiodes in C++

Cited by 6 publications

References 10 publications

A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

A Fokker–Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

On the use of Po210and Am241 collimated alpha sources for the characterization of the onset of carrier multiplication in power devices

Modeling Temperature-Dependent Avalanche Characteristics of InP

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