5787318).

An InGaAs/InAlAs Single Photon Avalanche Diode was fabricated and characterized. Leakage current, dark count and photon count measurements were carried out on the devices from 260 to 290 K. Due to better temperature stability of avalanche breakdown in InAlAs, the device breakdown voltage varied by < 0.2 V over the 30 K temperature range studied, which corresponds to a temperature coefficient of breakdown voltage less than 7 mV/K. The single photon detection efficiency achieved in gated mode was 21 and 10% at 260 and 290 K, respectively. However the dark count rates were high due to excessive band-to-band tunneling current in the InAlAs avalanche region. 1971-1973 (2003 1188-1189 (1985).

Silicon-based single photon avalanche diodes (SPADs) are widely used as single photon detectors of visible and near infrared photons. There has, however, been a lack of models accurately interpreting the physics of impact ionization (the mechanism behind avalanche breakdown) for these devices. In this paper, we present a statistical simulation model for silicon SPADs that is capable of predicting breakdown probability, mean time to breakdown, and timing jitter. Our model inherently incorporates carriers' dead space due to phonon scattering and allows for nonuniform electric fields. Model validation included avalanche gain, excess noise factor, breakdown voltage, breakdown probability, and timing statistics. Simulating an n-on-p and a p-on-n SPAD design using our model, we found that the n-on-p design offers significantly improved mean time to breakdown and timing jitter characteristics. For a breakdown probability of 0.5, mean time to breakdown and timing jitter from the n-on-p design were 3 and 4 times smaller compared to those from the p-on-n design. The data reported in this paper are available from the ORDA digital repository (

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