Simple theory of the optical absorption coefficient in nonparabolic semiconductors

Chakraborty, Pinaki; Singh, L. Joyprakash; Ghatak, K. P.

doi:10.1063/1.1669077

Cited by 21 publications

(7 citation statements)

References 24 publications

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“…With increase of density, the peak gain Table I. The values of the energy band constants for (a) InSb, (b) InAs, (c) Hg 1Àx Cd x Te, and (d) In 1-x Ga x As y P 1-y lattice matched to InP [25,[27][28][29]. values for three-band model of Kane become larger than those for parabolic bands because of the larger reduced density of states available because of nonparabolicity of band structure.…”

Section: Resultsmentioning

confidence: 99%

“…It may be noted that we have obtained a different expression than that obtained in , where the two components of

((), \overset{a}{true} . p_{cv} ((), \overset{true\to}{k}))

in are added directly without the consideration of their vectorial direction dependence.…”

Section: Theoretical Backgroundmentioning

confidence: 89%

“…Because the electron transition in the same band is not considered for the study of interband optical transition , therefore,

〈S | \overset{true¯}{p} | S〉 = 〈X | \overset{true¯}{p} | X〉 = 〈Y | \overset{true¯}{p} | Y〉 = 〈Z | \overset{true¯}{p} | Z〉 = 0

and

〈X | \overset{true¯}{p} | Y〉 = 〈Y | \overset{true¯}{p} | Z〉 = 〈Z | \overset{true¯}{p} | X〉 = 0

whereas

〈S | \overset{true¯}{p} | X〉 = \overset{true^}{i} p_{x}

〈S | \overset{true¯}{p} | Y〉 = \overset{true^}{j} p_{y}

〈S | \overset{true¯}{p} | Z〉 = \overset{true^}{k} p_{z}

where

\overset{i}{true}

\overset{j}{true}

, and

\overset{k}{true}

are the unit vectors along the x , y , and z ‐axes, respectively.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

“…Because the electron transition in the same band is not considered for the study of interband optical transition [11,25], therefore,…”

Section: Formulation Of the Generalized Optical Gain For Materials Obmentioning

confidence: 99%

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Generalized optical gain analysis in nonparabolic semiconductor laser

Dey

Maiti

Chanda

2013

Int J Numerical Modelling

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SUMMARY A simple generalized theory is developed for optical gain of nonparabolic semiconductor lasers based on the three‐band model of Kane, by taking into account the wave‐vector (k→) dependence of the optical matrix element. The gain in laser of nonparabolic semiconductors is demonstrated, by taking InAs, InSb, Hg1−xCdxTe and In1−xGaxAsyP1−y lattice matched to InP as examples, and it has been found that the peak of the gain spectra for a given carrier density is higher in the three‐band model of Kane than those with parabolic energy band approximations in all the cases. The difference between the peak of gain spectra for three‐band model and the parabolic band model is greater for laser of narrow band gap materials in comparisons with that of laser of wide band gap materials, thereby reveals the necessity for inclusion of the nonparabolicity in modeling lasers of small band gap materials. The well‐known results for wide band gap materials having parabolic energy bands has also been obtained from our generalized formulation under certain limiting condition. Copyright © 2013 John Wiley & Sons, Ltd.

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Section: Resultsmentioning

confidence: 99%

“…It may be noted that we have obtained a different expression than that obtained in , where the two components of

((), \overset{a}{true} . p_{cv} ((), \overset{true\to}{k}))

in are added directly without the consideration of their vectorial direction dependence.…”

Section: Theoretical Backgroundmentioning

confidence: 89%

“…Because the electron transition in the same band is not considered for the study of interband optical transition , therefore,

〈S | \overset{true¯}{p} | S〉 = 〈X | \overset{true¯}{p} | X〉 = 〈Y | \overset{true¯}{p} | Y〉 = 〈Z | \overset{true¯}{p} | Z〉 = 0

and

〈X | \overset{true¯}{p} | Y〉 = 〈Y | \overset{true¯}{p} | Z〉 = 〈Z | \overset{true¯}{p} | X〉 = 0

whereas

〈S | \overset{true¯}{p} | X〉 = \overset{true^}{i} p_{x}

〈S | \overset{true¯}{p} | Y〉 = \overset{true^}{j} p_{y}

〈S | \overset{true¯}{p} | Z〉 = \overset{true^}{k} p_{z}

where

\overset{i}{true}

\overset{j}{true}

, and

\overset{k}{true}

are the unit vectors along the x , y , and z ‐axes, respectively.…”

Section: Theoretical Backgroundmentioning

confidence: 99%

“…Because the electron transition in the same band is not considered for the study of interband optical transition [11,25], therefore,…”

Section: Formulation Of the Generalized Optical Gain For Materials Obmentioning

confidence: 99%

See 2 more Smart Citations

Generalized optical gain analysis in nonparabolic semiconductor laser

Dey

Maiti

Chanda

2013

Int J Numerical Modelling

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“…However, in many cases this approximation is not well justified. 33,34 The effect of the subband nonparabolicity on the optical absorption has not been fully studied. In this paper, the effect of the magnetic field on the electron-phonon interaction and the optical absorption is investigated.…”

Section: Introductionmentioning

confidence: 99%

Optical absorption coefficients in two-dimensional semiconductors under strong magnetic field

Cao

Zhang

2006

Journal of Applied Physics

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We calculate the photon absorption coefficient of hot two-dimensional electrons in the presence of a strong magnetic field. The electrons interact strongly with the optical phonons and the acoustic phonons in quantum wells. The dependence of the optical absorption on the magnetic field is obtained by using the quantum mechanical kinetic theory. It is found that the photon absorption spectrum displays a local magnetophonon resonance. The magnetophonon absorption resulting from inelastic scattering between Landau levels is more pronounced at higher temperature. The effect of subband nonparabolicity on the absorption coefficient is also discussed.

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Photoemission from Bulk Optoelectronic Materials

Ghatak

Bhattacharya

2009

Photoemission From Optoelectronic Materials and Their Nanostructures

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Simple theory of the optical absorption coefficient in nonparabolic semiconductors

Cited by 21 publications

References 24 publications

Generalized optical gain analysis in nonparabolic semiconductor laser

Generalized optical gain analysis in nonparabolic semiconductor laser

Optical absorption coefficients in two-dimensional semiconductors under strong magnetic field

Photoemission from Bulk Optoelectronic Materials

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