Sims analytical technique for PV applications

Abstract

This paper presents analytical performance provided by SIMS tools for the development and manufacturing of new solar cells. Results for two main applications are presented: trace element analysis in PV Si feedstock with detection limits from the ppm down to the ppb range (depending on the species to be analyzed) for light elements (C, 0, N), main Si dopants (B, P, As) and metals ; in-depth distribution of main components and trace elements in CIGS thin films.

Incorporation of alkali metals in chalcogenide solar cells

“…The sputtered ions are analyzed by measuring their kinetic energy using an electric field and an aperture, and their mass is determined through time-of-flight, magnetic sector, or quadrupole mass spectrometry. For quantitative measurements, SIMS needs reference samples [138]; however, by using Cs þ as the primary ion and by looking at the secondary cluster ions of matrix-Cs þ , the measurements can lead to semi-quantitative results with a minor number of reference samples [138]. If in addition to Na, K is to be measured, then O 2 þ needs to be used as primary ions.…”