This paper presents analytical performances provided by SIMS tools for the development and manufacture of new solar cells. Results for two main applications are presented: trace element analysis in PV (photovoltaic) Si feedstock with detection limits from the ppm down to the ppb range (depending on the species to be analyzed) for light elements (C, O, N), main Si dopants (B, P, As) and metals; indepth distribution of main components and trace elements in CIGS thin films.

Offering high sensitivity, depth profiling and ion imaging capabilities together with high throughput, dynamic secondary ion mass spectrometry (SIMS) proves extremely useful for a wide range of nuclear science applications. The CAMECA IMS 7f/7f-Auto is a versatile magnetic sector SIMS well suited for such applications. In this work, various examples of material analyses that are of interest for nuclear science are presented: depth profiling of the xenon and mapping of contaminants in CeO 2 , in-depth distribution of iodine in SiC using the energy filtering technique for improving the I detection limit, and depth profiling analysis of molybdenum in UO 2 using eucentric sample rotation for minimizing surface roughness development (thus improving data quality).

Improving the manufacturing yield in light emitting diode highly competitive market requires process control strategy similar to what has been applied to integrated circuit (IC) manufacturing for years. Dynamic secondary ion mass spectrometry (SIMS) is a key analytical technique, as it provides depth profiles with excellent detection sensitivity for dopants and impurities, while keeping high analysis throughput. Dynamic SIMS data obtained using the CAMECA IMS 7f will be presented. Based on a double focusing magnetic sector mass spectrometer, this instrument achieves benchmark performance in terms of sensitivity, depth resolution and mass resolution. Depth profiling and detection limits for dopants as well as for light elements will be shown. A method for evaluating the light elements content on high purity samples will also be detailed.

This paper presents an investigation on SIMS profile quantification for ultra-shallow profiles. New configuration for the Cesium and Oxygen sources on the CAMECA IMS Wf tool provides SIMS profiling capability at 150 eV impact energy with a sputter rate of 1 and 2 nm/min for the Cs + and O 2 + primary beams, respectively. Results for as-implanted B, P and As profiles using extremely low impact energy (EXLIE) sputtering conditions are compared with HR-RBS and ERDA profiles.

This paper presents analytical performance provided by SIMS tools for the development and manufacturing of new solar cells. Results for two main applications are presented: trace element analysis in PV Si feedstock with detection limits from the ppm down to the ppb range (depending on the species to be analyzed) for light elements (C, 0, N), main Si dopants (B, P, As) and metals ; in-depth distribution of main components and trace elements in CIGS thin films.