2011
DOI: 10.1002/sia.3459
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Advanced SIMS quantification in the first few nm of B, P and As ultrashallow implants

Abstract: This paper presents an investigation on SIMS profile quantification for ultra-shallow profiles. New configuration for the Cesium and Oxygen sources on the CAMECA IMS Wf tool provides SIMS profiling capability at 150 eV impact energy with a sputter rate of 1 and 2 nm/min for the Cs + and O 2 + primary beams, respectively. Results for as-implanted B, P and As profiles using extremely low impact energy (EXLIE) sputtering conditions are compared with HR-RBS and ERDA profiles.

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Cited by 4 publications
(2 citation statements)
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“…Included in this number is a paper by Merkulov and co-workers, who compared the use of both primary ion types during the depth-profile analysis of As, B and P in ultra-shallow implants. 318 The ablation rate achievable was 1 and 2 nm min À1 for Cs + and O 2…”
Section: Sims and Tof-sims Applicationsmentioning
confidence: 96%
See 1 more Smart Citation
“…Included in this number is a paper by Merkulov and co-workers, who compared the use of both primary ion types during the depth-profile analysis of As, B and P in ultra-shallow implants. 318 The ablation rate achievable was 1 and 2 nm min À1 for Cs + and O 2…”
Section: Sims and Tof-sims Applicationsmentioning
confidence: 96%
“…318 The ablation rate achievable was 1 and 2 nm min À1 for Cs + and O 2 + respectively when a primary ion beam with an energy of 150 eV was used. Several authors have used low energy O 2 + or Cs + ion beams.…”
Section: X-ray Based Techniquesmentioning
confidence: 98%