SIMS characterization of segregation in InAs/GaAs heterostructures

Gallardo, S.; Kudriatsev, Y.; Villegas, A.; Ramirez, Giovanni; Asomoza, R.; Cruz‐Hernández, E.; Rojas-Ramírez, Juan Salvador; López‐López, M.

doi:10.1016/j.apsusc.2008.05.174

Cited by 12 publications

(4 citation statements)

References 7 publications

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“…Этот множитель (точнее, пара-метр λ sg для этого множителя) может быть определен сравнением растущего и спадающего фронтов в концен-трационном профиле марганца, как это было предложе-но в наших предыдущих работах для анализа квантовой ямы GaAs/InGaAs/GaAs [16,19]. Следует отметить, что в данном случае определенный таким образом параметр будет представлять собой сумму квадратур параметров сегрегации и имплантации атомов отдачи.…”

Section: экспериментальные результаты и обсуждениеunclassified

Дельта-легирование соединениями марганца гетероструктур на основе GaAs

Moiseev¹,

Неведомский²,

Kudriavtsev³

et al. 2017

Физика И Техника Полупроводников

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Гетероструктуры с квантовыми ямами GaAs/InGaAs/GaAs, легированные пространственно удаленными моноатомными слоями Mn, были получены на подложке GaAs(001) в режиме монослойного наращивания методом молекулярно-пучковой эпитаксии. Комбинированные исследования полученных образцов были проведены при помощи метода вторичной ионной масс-спектрометрии, рентгено-дифракционных измерений и с использованием просвечивающего электронного микроскопа. Исследуемые гетероструктуры с концен-трацией легирующей примеси 0.5 монослоя были упруго напряжены и демонстрировали планарные четкие границы раздела без видимых протяженных и точечных дефектов. Предложена методика визуализации распределения концентрации марганца в трехмерной матрице GaAs вблизи квантовой ямы. Согласно экспе-риментальным результатам существует вероятность диффузии марганца в квантовую яму GaAs/InGaAs/GaAs при уменьшении критической толщины буферного слоя GaAs менее 3 нм.Работа была выполнена при частичной поддержке проекта РФФИ (№ 15-02-08909).

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Section: экспериментальные результаты и обсуждениеunclassified

Дельта-легирование соединениями марганца гетероструктур на основе GaAs

Moiseev¹,

Неведомский²,

Kudriavtsev³

et al. 2017

Физика И Техника Полупроводников

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“…In the more widely established application of III-V quantum well (QW) structures for optoelectronic devices, abruptness of hetero-epitaxial interfaces is known to have a large impact on device performance (11). In particular, the atomic definition of the InGaAs/GaAs heteroepitaxial interface is known to be highly sensitive to In-segregation in the Molecular Beam Epitaxy (MBE) growth direction (12,13). Successful development of above-mentioned applications requires the accurate characterization of in-depth chemical distribution with nanometric precision.…”

Section: Introductionmentioning

confidence: 99%

Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs

Hopstaken¹,

Pfeiffer²,

Gordon³

et al. 2010

ECS Trans.

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We investigate the sputtering behavior and depth resolution upon low energy ion irradiation during Secondary Ion Mass Spectrometry (SIMS) depth profiling of GaAs. We present a systematic and quantitative study of the impact of ion species, primary ion impact energy, and incident angle on the evolution of depth resolution, using a well-defined InGaAs/GaAs multilayer structure with highly abrupt hetero-interfaces. We demonstrate that for low energy O 2 + ion beam irradiation, SIMS depth resolution becomes progressively degraded by (transient) incorporation of high surface O-concentration levels in the altered layer, leading to detrimental ion-beam induced formation of topography. In case of low energy oblique Cs + ion beam irradiation, sputtering behavior of GaAs is well-behaved with no significant transient yield changes and a constant depth resolution. This enables SIMS depth profiling of sharp hetero-epitaxial III-V compound semiconductor structures and shallow dopant profiles with sufficiently good depth resolution with good detection efficiency.

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“…Consequently, limiting segregation could be a way to keep more In in the 2D islands and form real SML-QDs in the presence of the (24) surface reconstruction. Since In segregation in the InAs/GaAs system is a thermally activated process with an activation energy of around 0.1 eV, reducing the sample temperature during growth is the easiest way to limit segregation [144,168]. Of course, this may also reduce the crystalline quality of the sample, and a compromise will thus be necessary.…”

Section: -2-1 Discussion Of the Results Of The 1 St Group Of Samplesmentioning

confidence: 99%

“…Under such conditions, the As flux and the growth rates of In and Ga wouldn't need to be reduced, and the In incorporation would be unity again [170]. The only drawback is that In segregation and evaporation become larger at higher temperatures [168]. Nothing can be done to prevent the former, but the latter can be taken into account by calibrating the InAs growth rate at the same temperature.…”

Section: -3 Group 2: (2 × 4) Surface Reconstruction Achieved With Oth...mentioning

confidence: 99%

Optimization of InAs/GaAs submonolayer quantum dots grown on GaAs(001) with a (2×4) surface reconstruction for infrared photodetectors

Zeidan

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My first thanks and praise go to God, the almighty, who has provided me with strength and encouragement in all the challenging moments of this work. Then I would like to take this opportunity to express my gratitude to the people who have always been there for me and who have influenced my life in so many ways.First and foremost, I am deeply indebted to my doctoral advisor Prof. Dr. Alain André Quivy. To him, I extend my sincere gratitude for all his support, encouragement, guidance, help, and especially his patience and advices over the past seven years since I have been under his supervision as a master's student.I am also deeply indebted to Prof. Paul Simmonds and his group at Boise State University, especially Kevin Vallejo and Katie Sautter, for their efforts in growing some samples included in this thesis. I thank you for the financial support you provided for growing and shipping the samples at your own expense.My special thanks to Prof. Paul Koenraad and Dr. Raja Gajjela of the Eindhoven University for performing X-STM measurements on the samples of this thesis.In addition, I would like to thank Prof. Christoph Deneke and Ailton Garcia for their assistance in training me for using the MBE system at the Brazilian Nanotechnology National Laboratory (LNNano). A special thanks should be given to Dr. Jefferson Bettini, from LNNano, who measured one sample shown in this thesis by transmission electron microscopy (TEM). I am extremely grateful to all the members of the MBE group at LNMS,

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SIMS characterization of segregation in InAs/GaAs heterostructures

Cited by 12 publications

References 7 publications

Дельта-легирование соединениями марганца гетероструктур на основе GaAs

Дельта-легирование соединениями марганца гетероструктур на основе GaAs

Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs

Optimization of InAs/GaAs submonolayer quantum dots grown on GaAs(001) with a (2×4) surface reconstruction for infrared photodetectors

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