SIMS quantitative depth profiling of matrix elements in semiconductor layers

Experimental study of the orientation dependence of indium incorporation in GaInN

“…In addition, the peaks were somewhat broadened for (10-10) GaN, where some pyramidal hillocks were seen. The area under each indium concentration profile peak is representative of the indium content in each QW [27]. The indium content was calculated by dividing the area under each peak by the QW width, the width being essentially identical for all orientations except two (see the Results section below).…”

“…Depth calibration was performed based on final crater depth measured by a Tencor Profiler. Data quantification was accomplished using the approach developed in [27]. A thick (~100 nm) GaInN layer characterized by XRD was used as a reference sample for calculating the elemental sensitivity factors.…”

“…5 shows the indium incorporation on and (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30) planes in comparison with that on the aand m-planes. The indium incorporation for the and (12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30) planes is in between those for the a-and m-planes. Fig.…”

Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials

“…The use of a retardation filter to improve the abundance sensitivity of MC-ICP-MS was demonstrated to be advantageous for the determination of low abundance U isotopes. 180 This was applied to the determination of 236 U: 238 U ratios in the range 10 À7 -10 À8 . Tailing from 238 U + on 236 U + was improved by almost 2 orders of magnitude with only a 30% reduction in absolute intensity.…”

Nonlinearities in depth profiling nanometer layers

“…The data showed results in which the enhancement of the rate for the first Si layer ͑i.e., from 0 to 4.15 nm͒ was about halved in the next layer ͑from 4.15 to 8.52 nm͒. Elsewhere, others [30][31][32][33][34] showed excellent linearity of CsX + ions for the quantification of major elements, X. It is very difficult to make suitable delta layers to study the initial changes in sputtering yield in the range from 0 to 2 nm for the reasons given above.…”