SIMS Studies of Semi‐Insulating InP Amorphized by Mg and Si

Oberstar, J. D.; Streetman, B. G.; Baker, J. E.; Williams, Peter W.

doi:10.1149/1.2124128

Cited by 18 publications

(6 citation statements)

References 15 publications

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“…In our simulations of the results of Oberstar et al (12,13), the unannealed impurity profile is assumed to be a gaussian resulting from a 1 x 10 '5 cm -2 implant, with a projected range of 4800A and a straggle of 800A. A model has been proposed to describe the experimental results for Be migration during annealing which involves reduced diffusion at higher concentrations (20).…”

Section: Results For Be In Si Inpmentioning

confidence: 99%

“…In fact, the fastest diffusion actually occurs at impurity concentrations which are several orders of magnitude lower than the maximum concentration present in the sample (2-4, 7, 12-17). Oberstar et al (12,13) and Vaidyanathan et al (14) have observed deep penetration of Be and Mg, respectively, in InP:Fe at acceptor concentrations near the original Fe concentration in the SI substrates. Other workers have observed that for acceptor diffusion of ira-* Electrochemical Society Student Member.…”

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confidence: 96%

“…plantation into n-type material, deep penetration of the acceptor occurs when the acceptor concentration is only slightly greater than the donor concentration (7,(15)(16)(17). This research focuses on simulating the role of impurity concentration and out-diffusion in the anomalous diffusion of implanted Be and Mg during thermal annealing, reported by Oberstar et al (12,13). These experimental results contain several interesting features which are common to the behavior of both Be and Mg, and from this point forward we will consider only Be.…”

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confidence: 99%

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Simulation of Anomalous Acceptor Diffusion in Compound Semiconductors

Farley

Streetman

1987

J. Electrochem. Soc.

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Anomalous diffusion is often observed for acceptors diffused or implanted into compound semiconductors such as GaAs and InP. We present a model for this type of diffusion, and use as an example the anomalous annealing behavior of Be-implanted semi-insulating (SI) InP:Fe. In the bulk of the crystal, we can simulate the major features of the observed experimental profiles using a relatively simple model which includes fast interstitial-substitutional diffusion but not outdiffusion or gettering to damage. However, in the near-surface region, out-diffusion of the implanted impurity must be considered in order to simulate accurately impurity migration. The resulting profiles demonstrate that enhanced diffusion in a narrow band of concentrations is a critical determinant of the post-anneal impurity profile and suggest that Be may diffuse by an interstitial-substitutional mechanism in InP. Several mechanisms have been proposed to explain why Be diffusion in the bulk is slower at higher and lower Be concentrations. These include gradients in the ionization coefficient, the effect of the substitutional species concentration on the potential of the interstitial species, and electric fields formed at the p-i or p-n junction and in the p+ regions. We believe that the depletion of Fe in the Be-diffused region may be due to the position of the Fermi level and the electric field in the p-type region. These conclusions are corroborated by studies of Fe diffusion in GaAs.

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Section: Results For Be In Si Inpmentioning

confidence: 99%

mentioning

confidence: 96%

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confidence: 99%

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Simulation of Anomalous Acceptor Diffusion in Compound Semiconductors

Farley

Streetman

1987

J. Electrochem. Soc.

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“…The anneal-induced migration of Be implanted in InP(100) has been studied by using SIMS; Be was found to be a rapid diffusant in InP even at low fluences (676). With SIMS, the annealing characteristics of amorphizing implants of Mg and Si in InP have been examined; atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region (677). SIMS has also been used to observe copper atom gettering in ion-damaged GaP (352).…”

Section: Semiconductorsmentioning

confidence: 99%

Forensic science

Brettell¹,

Saferstein²

1983

Anal. Chem.

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He Joined the company in 1959 as a radiochemist. His current work is directed toward developing advanced techniques for semiconductor materials characterization using electron beam (scanning Auger) and in microprobe techniques for chemical imperfections. X-ray topography, and scanning transmission electron microscopy techniques for physical imperfections. Larrabee earned a B.Sc. from the University ol Bishop's College In Quebec and an M.Sc. in chemistry from McMaster University in Ontario, Canada. He has published in analytical, electrochemical, and instrumentation journals and contributed chaplers In books. He has coauthored a book on the characterization of semiconductor materials and coedited a book on the characterization of solid surfaces. Larrabee is a member of the ACS, Electrochemical Society, SAS, and the Dallas Society of Analytical Chemists. R. Allen Bowling received his B.S. In Chemistry from the University ol Alabama and a Ph.D. In Chemistry from ihe University of Tennessee.He held an Alexander von Humboldt postdoctoral research position at the Institute ol Inorganic Chemistry, University of Frankfurt, West Germany, from March 1979 to July 1980. He joined Texas Instruments Incorporated in September 1980 as a process control engineer in a semiconductor processing area. In January 1982, he became a member of the technical staff in the Materials Characterization Branch of the Materials Science Laboratory of Texas Instruments, where he is presently responsible for Auger and XPS instrumentation. Bowling is a member of the Electrochemical Society and the American Vacuum Society.

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“…Among previous papers concerning depth profiles of dopants, or residual impurities, in this material we can quote XD. OBERSTAR et al [1][2][3] who studied depth distributions of Be, Mg, Fe and Si in as-implanted or annealed samples. This paper, firstly, reports the depth profiles of unannealed C, Si, O, S, Se implants, secondly, describes the behaviour of bulk dopants (Zn, Fe) in implanted or diffused layers.…”

mentioning

confidence: 99%

Application of Cesium Primary Beam to the Characterization of III.V Semiconductors by Sims

Gauneau¹,

Chaplain²,

Rupert³

1984

J. Phys. Colloques

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Ce travail décrit, d'une part, les profils en profondeur des éléments : C, Si, 0, S, Se, dans du phosphure d'indium non recuit, d'autre part le comportement après recuit, des dopants résiduels : Fe, Zn, dans des substrats implantés Si, Se, ou diffusés zinc. L'utilisation d'un faisceau d'ions césium permet d'obtenir une description précise des profils pour les éléments ayant une grande affinité électronique.

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SIMS Studies of Semi‐Insulating InP Amorphized by Mg and Si

Cited by 18 publications

References 15 publications

Simulation of Anomalous Acceptor Diffusion in Compound Semiconductors

Simulation of Anomalous Acceptor Diffusion in Compound Semiconductors

Forensic science

Application of Cesium Primary Beam to the Characterization of III.V Semiconductors by Sims

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