Simulation and analysis of 1.55 μm double-fused vertical-cavity lasers

Abstract

Using a comprehensive numerical model, we analyze the first long-wavelength (1.55 μm) vertical-cavity surface-emitting lasers operating continuous-wave at room temperature (up to 33 °C). These double-fused lasers employ strain-compensated InGaAsP multi-quantum wells sandwiched between GaAs/AlGaAs distributed Bragg reflectors that are fused on both sides of the InP spacer. The two-dimensional model includes drift and diffusion of electrons and holes, finite-element thermal analysis, calculation of the internal optical field at threshold, and k⋅p band structure computations. The simulation shows excellent agreement with a large variety of experimental characteristics. Internal laser parameters like optical losses and injection efficiency are obtained. The thermal conductivity of the multilayer mirror is found to be only one third of the value expected. Temperature dependent absorption and Auger recombination within the active region as well as lateral leakage currents are identified as dominating loss mechanisms. The analysis shows great potential for high-temperature operation of double-fused vertical-cavity lasers.

Design and optimization of high-performance 1.3-μm VCSELs

“…1). 11 The thermal change of the refractive index is assumed 2 x 10 -4 /K for InP-based layers and 3 x 10 -4 /K for GaAs-based layers, 12 which results in good agreement with the measured shift of the emission wavelength. Internal optical loss in 1.3 µm lasers is affected by free carriers (n,p) as well as by photon scattering (α s ) according to α(n,p) = α s + k n n + k p p .…”

Vertical-Cavity Surface-Emitting Laser Devices

“…The model has been generalized successfully by Piprek et al [162] for long-wavelength VCSELs. Nevertheless, this simulation has been successfully used to model long-wavelength VCSEL performance thermal-electrical-optical characteristics [163]. Nevertheless, this simulation has been successfully used to model long-wavelength VCSEL performance thermal-electrical-optical characteristics [163].…”

Design of ultrafast all-optical PolSK DMUX based on semiconductor optical amplifiers

“…All material parameters for InP-In 0.76 Ga 0.24 As 0.82 P 0.18 under consideration were reported in Ref. [12]. With this work, the confinement factor will increase.…”