Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Abstract

In order to improve the threshold voltage and gate reliability of conventional enhanced p-GaN-gated AlGaN/GaN high electron mobility transistors (C-HEMTs) while maintaining a low on-resistance, an improved design solution for p-GaN HEMTs with P-I-N junction gate (PIN-HEMTs) has been proposed. Simulation results show that energy band modulation is achieved by adjusting the doping concentration and thickness of each layer of the PIN junction, and high-performance p-GaN gate HEMTs with adjustable threshold voltages ranging from 0.56 V to 4.75 V and gate breakdown voltages ranging from 19.8 V to 30.3 V would be prepared. The PIN-HEMT has a quasi-self-alignment property, which means that good gate control is independent of gate metal alignment. This not only improves the production efficiency, but also solves the problems of weak gate control and electric field aggregation at the gate edge caused by the gate misalignment in conventional p-GaN gate HEMTs, thus realizing lower on-resistance and higher gate breakdown voltage, which demonstrates this structure we proposed has excellent potentials for realizing effective and reliable high-power transistors.

Design optimization of wide-gate swing E-mode GaN HEMTs with junction barrier Schottky gate

“…This poses challenges for the circuit design in terms of safety and complexity. Therefore, to meet the safety requirements of systems, enhancementmode (E-mode) devices with normally-off characteristics have been developed [6][7][8][9][10][11][12][13][14]. Several methods have been proposed to achieve normally-off GaN HEMT, including cascode structures [6], recessed gates [7,8], fluorine ion implantation [9], ultra-thin barrier layers [10], and p-type (Al)GaN cap layers [11][12][13][14].…”

“…Therefore, to meet the safety requirements of systems, enhancementmode (E-mode) devices with normally-off characteristics have been developed [6][7][8][9][10][11][12][13][14]. Several methods have been proposed to achieve normally-off GaN HEMT, including cascode structures [6], recessed gates [7,8], fluorine ion implantation [9], ultra-thin barrier layers [10], and p-type (Al)GaN cap layers [11][12][13][14]. Among these structures, the p-type GaN cap layer structure has been widely adopted in commercial applications owing to its simplicity, reliability, and excellent performance.…”

Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks

“…It is necessary to design normally-off GaN HEMTs to increase safety and reliability in circuit design [7,8]. Several techniques have been reported to realize normally-off GaN HEMTs, including cascode structures [9], recessed gates [10,11], fluorine ion implantation [12], ultrathin barrier layers [13], and p-(Al)GaN cap layers [14][15][16][17][18]. Among these techniques, the p-GaN cap layer structure stands out for its widespread adoption in commercial applications, attributed to its straightforward design, robustness, and superior performance.…”