Simulation and comparative study of tunneling field effect transistors with dopant-segregated Schottky source/drain

Zhang, Yi Bo; Sun, Lei; Xu, Hong‐Ji; Han, Jing

doi:10.7567/jjap.55.04ed09

Cited by 2 publications

(2 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because of the symmetrical structure of source and drain in TFET, taking n-type TFET as an example, when a large negative pressure is applied to the gate, band to band tunneling will occur in the drain region and body region, resulting in the increase of leakage current and the bipolar effect [ 19 , 20 , 21 , 22 ], as seen in Figure 8 .…”

Section: Resultsmentioning

confidence: 99%

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

et al. 2021

View full text Add to dashboard Cite

Since the oxide/source overlap structure can improve the tunneling probability and on-state current of tunneling field effect transistor (TFET) devices, and the silicon-on-insulator (SOI) structure has the effect of resisting the single event effect, SOI-TFET with the oxide/source overlap structure is a device with development potential. The total ionizing dose (TID) effect on SOI-TFET was studied by discussing the switching ratio, band–band tunneling rate, threshold voltage, sub-threshold swing and bipolar effect of the device under different doses of irradiation. At the same time, simulations prove that selecting the proper thickness of the buried oxide (BOX) layer can effectively reduce the influence of the TID effect. This provides a way of direction and method for research on the irradiation effects on the device in the future.

show abstract

Section: Resultsmentioning

confidence: 99%

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

et al. 2021

View full text Add to dashboard Cite

show abstract

“…[19][20][21] Previously, S-TFET with a dopant segregation source=drain based on Si channel was investigated. 22) This device inherits the advantages of TFETs with a steep SS, and is superior to conventional TFETs with a less complex manufacture process and a lower thermal budget, but still suffers from relatively low ON-state current.…”

Section: Introductionmentioning

confidence: 99%

Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

Liu¹,

Cheng²,

Zhang³

et al. 2017

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

A tri gate Ge-based tunneling field-effect transistor (TFET) has been numerically studied with technology computer aided design (TCAD) tools. Dopant segregated Schottky source/drain is applied to the device structure design (DS-TFET). The characteristics of the DS-TFET are compared and analyzed comprehensively. It is found that the performance of n-channel tri gate DS-TFET with a positive bias is insensitive to the dopant concentration and barrier height at n-type drain, and that the dopant concentration and barrier height at a p-type source considerably affect the device performance. The domination of electron current in the entire BTBT current of this device accounts for this phenomenon and the tri-gate DS-TFET is proved to have a higher performance than its dual-gate counterpart.

show abstract

Simulation and comparative study of tunneling field effect transistors with dopant-segregated Schottky source/drain

Cited by 2 publications

References 43 publications

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET

Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

Contact Info

Product

Resources

About