Simulation and design of field emitters

Marcus, R. B.; Chin, Ken K.; Yuan, Yixuan; Wang, H.; Carr, W.N.

doi:10.1109/16.106255

Cited by 55 publications

(18 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Structural feature of materials affects some defining characteristics during the field electron emission process, including the field enhancement factor, local electronic field distribution, as well as actual emission sites and emission area. [22] And hence, it is of important significance to simulate and analyze the field emission structures and their corresponding emission properties. In this work, we focused on vertical tapered nanostructure and its derivative wedged ordered nanostructure.…”

Section: Doi: 101002/aelm201700295mentioning

confidence: 99%

An Analytical Modeling of Field Electron Emission for a Vertical Wedged Ordered Nanostructure

Shen

et al. 2017

Adv Elect Materials

View full text Add to dashboard Cite

ties and potential applications: Spindt-type array composed of tapered microstructures have shown high current density over 1.6 × 10 3 A cm −2 with site density of 10 9 cm −2 , [2][3][4] and has been successfully applied in the traveling wave tube with the saturation power of 100 W and working frequency of 5 GHz. [5,6] High aspect ratio carbon nanotubes (CNTs) revealed large field enhancement factor (generally larger than ≈10 3 ) and good field electron emission properties, [7][8][9] and have been used in field emission display (FED), [10,11] flat panel light source, [12] X-ray tube, [13,14] and microwave tube. [15,16] Semiconductor nanowires (e.g., ZnO, CuO) exhibited the field electron emission characteristics with low turn-on field and good uniformity, [17][18][19] and have been demonstrated to exhibit application prospect in flat panel X-ray source and detector. [20,21] Although there is much experimental research and progress, theoretical analysis and calculation of field electron emission structure to tell people where the advantages lie and how to make improvements are still scarce, in order to obtain efficient field electron emission materials. Structural feature of materials affects some defining characteristics during the field electron emission process, including the field enhancement factor, local electronic field distribution, as well as actual emission sites and emission area. [22] And hence, it is of important significance to simulate and analyze the field emission structures and their corresponding emission properties. In this work, we focused on vertical tapered nanostructure and its derivative wedged ordered nanostructure. On the one hand, such nanostructures have the advantages that their sharp tips, large lengths, and vertical alignment help to bring large field enhancement factor and low turn-on field, [23,24] and their robust bottoms contribute to reducing the resistance and improving heat dissipation at high applied electric field. [25] On the other hand, these nanostructures could be obtained through existing preparation methods, whether top-down microprocessing or the bottom-up self-assembled growth. Table 1 lists the representative vertical tapered structural field emission materials and their derivatives. Majority of them have shown good field electron emission properties.Here, in order to develop a kind of field electron emission structure with high current density, vertical ordered tapered and wedged nanostructures have been analytically modeled and thoroughly studied. Local electrical field intensity and emission current density distributions have been simulated, and the The development of field electron emission materials requires purposeful analytical modeling of structural features. A vertical wedged ordered nanostructure shows better field emission current density because of its in-plane continuity at the top emission edge: Individually, its calculated average current density can be 8.3-26.7 times larger than a tapered nanostructure when its bottom area s increases from 0.5 to 2...

show abstract

Section: Doi: 101002/aelm201700295mentioning

confidence: 99%

An Analytical Modeling of Field Electron Emission for a Vertical Wedged Ordered Nanostructure

Shen

et al. 2017

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…Numerous more rigorous treatments all leading to the same conclusions can be found in the literature. See for example the work of Marcus et al [14], Zaidman et al [15], Temple et al [16], Jensen et al [17], and Kang et al [18].…”

Section: The Original Spindt-cathode Fabrication Processmentioning

confidence: 99%

Spindt Field Emitter Arrays

Spindt

Brodie

Holland

et al. 2001

Vacuum Microelectronics

View full text Add to dashboard Cite

FIGURE 4.1. The Spindt microfabricated field emitter array. A BRIEF HISTORY OF THE SPINDT CATHODE 107program to develop microfabricated vacuum integrated circuits [3]. As a part of these activities he proposed a thin display tube based on matrix-addressed arrays of microfabricated field emitters -the field emission display, now commonly known as an FED [4]. This was the genesis of the VME technology that is presently being researched in essentially every industrial country in the world. As a part of Shoulder's program, Capp Spindt developed a process for microfabricating arrays of miniature metal field emitter cones in micron-size cavities with an integrated extraction electrode (gate). These structures were shown to produce detectable electron emission to an external anode with 20 V applied between the gate and the cones, and several microamperes of emission with 100 V applied between the cones and the gate. These results were first reported at the 1966 IEEE Conference on Tube Techniques [5], and in the open literature in 1968 [6]. Shoulders left SRI in 1968 to pursue other interests, and the emitter array development work continued at a low level, with internal funding by SRI until 1973. In 1973, support for development of a cold cathode for microwave tubes based on this microfabricated FEA technology was received from the NASA Lewis Research Center under the direction of Dr. Ralph Forman. At the same time Ivor Brodie, a well-known vacuum-tube expert, joined SRI as Director of the Applied Physics Laboratory, where the work was being done. One of Brodie's first acts was to initiate publication of the significant advances that had been made in the technology up to that time [7]. These two events, along with the concurrent development of large-area silicon emitter arrays at Westinghouse by Thomas and coworkers [8], were critical in taking the technology to the point that others began to take notice. In particular Richard Greene and Henry Gray at the Naval Research Laboratory (NRL), where thermionic vacuum integrated circuits developed at SRI by Geppert [9] were being evaluated, became interested in the technology and actively promoted it within the government as well as initiating NRL in-house work. In 1985 the French group at LETI, led by Robert Meyer, announced preliminary results with their efforts to produce a flat panel, field emission display (FED) based on the Spindt cathode [10]. The enormous commercial potential for such a product was immediately recognized by many throughout the world, and activity in the field (which by now was known as Vacuum Microelectronics) accelerated virtually overnight. SRI had also been working on a FED panel, and in 1987 Chris Holland, who was leading the panel fabrication effort at SRI, reported the first three-color FED panel [11]. At this time it became clear that many teams throughout the world were independently researching VME technology, but most were working in isolation and even innocent ignorance of others that were active in the field. Recognizing this, Richard Green...

show abstract

“…Thus, many efforts have been made on the development of new emitters with improved emission properties, including the evaluation techniques for such emitters. [2][3][4][5] Some of the present authors have extensively carried out electron holography measurements, which is a unique tool for quantitatively visualizing the electric field on a nanometer scale, on the various types of field emitters. In the previous studies, by means of electron holography, we have reported on not only evaluation techniques for the emitters in the presence of an applied voltage but also a useful method to obtain quantitative information on the microfields around the emitters.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Electron Holographic Analysis of Electric Potential Distribution around FEG-Emitters

et al. 2007

View full text Add to dashboard Cite

By means of electron holography, the electric potential distributions around a cold-type FEG-emitter (field emission gun emitter) are visualized with a change in the applied voltages. In a biased FEG-emitter, the experimental method for obtaining an unperturbed reference wave is applied in order to carry out quantitative electron holographic analyses. Further, through comparing the experimental results obtained by electron holography with those of the simulations taking into account the three dimensional configurations of the FEG-emitter and the anode, it is found that the experimental technique presented in this study is quite useful in obtaining the quantitative information regarding the electric field distribution around a biased FEG-emitter.

show abstract

Simulation and design of field emitters

Cited by 55 publications

References 5 publications

An Analytical Modeling of Field Electron Emission for a Vertical Wedged Ordered Nanostructure

An Analytical Modeling of Field Electron Emission for a Vertical Wedged Ordered Nanostructure

Spindt Field Emitter Arrays

Quantitative Electron Holographic Analysis of Electric Potential Distribution around FEG-Emitters

Contact Info

Product

Resources

About