Simulation and optimization of InGaN Schottky solar cells to enhance the interface quality

Khettou, Abderrahim; Zeydi, I.; Chellali, Mohammed Reda; Arbia, Marwa Ben; Mansouri, Sedik; Helal, Hicham; Hassen, Maaref

doi:10.1016/j.spmi.2020.106539

Cited by 12 publications

(4 citation statements)

References 76 publications

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“…When In molar fraction increases within the InGaN-based alloy, the background electron concentration tends to increase. Thus, the presented structure considered an electron concentration for intentional and non-intentional n-type doped layers with a free electron concentration ≥ 10 19 cm −3 [3,[16][17][18][19][20][21][22][23][24][25][26]. The high electron concentration can be attributed to the low temperature required to grow InGaN layers with high In content, provoking native defects, such as nitrogen vacancies [28][29][30].…”

Section: Methodsmentioning

confidence: 99%

Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range

et al. 2022

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A solar cell structure with a graded bandgap absorber layer based on InGaN has been proposed to overcome early predicted efficiency. Technological issues such as carrier concentration in the p- and n-type are based on the data available in the literature. The influence of carrier concentration-dependent mobility on the absorber layer has been studied, obtaining considerable improvements in efficiency and photocurrent density. Efficiency over the tandem solar cell theoretical limit has been reached. A current density of 52.95 mA/cm2, with an efficiency of over 85%, is determined for a PiN structure with an InGaN step-graded bandgap absorption layer and 65.44% of power conversion efficiency for the same structure considering piezoelectric polarization of fully-strained layers and interfaces with electron and hole surface recombination velocities of 10−3 cm/s.

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Section: Methodsmentioning

confidence: 99%

Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range

et al. 2022

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“…Over the last couple of decades, Semiconductors of the type III-N are of growing interest through various studies such as gallium nitride (GaN), aluminium nitride (AlN) and indium nitride (InN) with a gap of 3.4eV, 6.2eV and 0.7eV respectively [1][2][3][4]. III-N semiconductors has been widely used in optoelectronics, as they have the following characteristics: robust, having a high thermal conductivity, high melting point, and, moreover, a direct forbidden band gap [5].…”

Section: Introductionmentioning

confidence: 99%

Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Abed¹,

Naim²,

Djelloul³

et al. 2022

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The present work aims to improve the power and the conversion efficiency of solar cells, using the PC1D simulator, to study the performances of the solar cells based on (InGaN). The paper focuses first on optimization of the technological and geometrical parameters such as doping and the thickness of the layers to investigate their influence on the conversion efficiency of these structures. Then, the paper evaluates the efficiency η for the solar cell with and without Anti-reflection coating ARC on textured surfaces to achieve a final increase of 22.5% of conversion efficiency compared to InGaN standard solar cells.

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“…Recently, third-generation solar cells, including InGaN solar cells, have been actively investigated for obtaining high conversion e ciency [32]- [33]. InGaN alloy has exhibited potential in photodetectors, electronic devices, [34] and laser diodes [35].…”

Section: Introductionmentioning

confidence: 99%

Mid-band PPN InGaN solar cell for indoor visible light communication in 5G/6G applications

Manzoor

Aslam

et al. 2022

Preprint

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Recently, solar cells have been simultaneously used as energy harvester and receiver in free-space optical (FSO) communication networks. In this study, a mid-band p-In0.01Ga0.99N/p-In0.5Ga0.5N/n-In0.5Ga0.5N (PPN) solar cell that achieved a conversion efficiency of 26.36% (under 1.5 AM condition) was used as a receiver for an indoor FSO communication network. Considering that this solar cell had a length and width of 1 mm, the FSO system was simulated using Optisystm software. Meanwhile, the solar cell was simulated using SCAPS-1D software. The power received from the solar cell was compared with those of four commercially available avalanche photodiode (APD) receivers. Incident wavelength was varied in the visible region from 400 nm to 700 nm for transmission lengths of 5, 10, 15, and 20 m. The current–voltage and power–voltage curves were presented at different incident wavelengths and transmission distances. The InGaN solar cell provides more electrical power than all the commercial APDs. In conclusion, an increase in received power can improve the quality of an FSO network and support longer transmission length.

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Simulation and optimization of InGaN Schottky solar cells to enhance the interface quality

Cited by 12 publications

References 76 publications

Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range

Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range

Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Mid-band PPN InGaN solar cell for indoor visible light communication in 5G/6G applications

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