Simulation environment for semiconductor technology analysis

Accurate statistical process variation analysis for 0.25-μm CMOS with advanced TCAD methodology

“…Manuscript received March 9, 1998 Recently TCAD has become one of the key approaches to predict device performance and to optimize process conditions for submicron CMOS development [2]- [4]. In this context, many works have been reported on statistical TCAD, whose approach is indispensable for worst case design of processes for scaled-down CMOS devices.…”

“…For the practical use of the simulationbased RSM, however, major drawbacks have to be overcome to give reliable predictions. The earlier works fail to describe the TCAD calibration methodology clearly [2]- [4]. TCAD design for process and device design seems to be unsuccessful because of difficulties in achieving the accuracy of simulation and experimental verification.…”