Simulation of a Single-Mode Tunnel-Junction-Based Long-Wavelength VCSEL

Kaftroudi, Zahra Danesh; Rajaei, Esfandiar; Mazandarani, Abolfazl

doi:10.1007/s10946-014-9408-5

Cited by 2 publications

(1 citation statement)

References 19 publications

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“…Thus, careful adjustments of material parameters are required to find agreement with measurements. In our previous study, we explained how to extract these material parameters from experimental results [31]. In this study, the relevant parameters for the In 1-x-y Ga x Al y As material system are linearly interpolated between the parameters of the relevant binary semiconductor.…”

Section: Simulatormentioning

confidence: 99%

The Electron Stopper Layer Effect on Long-Wavelength VCSEL with AsSb-Based DBR Temperature Distribution

Kaftroudi¹,

Rajaei

2017

IJOP

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ABSTRACT-In this study, we have theoretically investigated the effect of electron stopper layer on internal temperature distribution of high performance vertical cavity surface-emitting laser emitting at 1305 nm. Simulation software PICS3D, which selfconsistently combines the 3D simulation of carrier transport, self-heating, gain computation and wave-guiding, was used. Simulation results show that change the electron stopper layer properties affect the internal temperature distribution of the device. The temperature of the active region increases compared with the original device. Comparison of temperature distribution in devices with different electron stopper layer confirms that optimized structure operates at maximum temperature.

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Section: Simulatormentioning

confidence: 99%

The Electron Stopper Layer Effect on Long-Wavelength VCSEL with AsSb-Based DBR Temperature Distribution

Kaftroudi¹,

Rajaei

2017

IJOP

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High-performance multi-junction cascade 1.3 µm quantum dot vertical cavity surface-emitting laser

Ping,

Bo,

Liang

et al. 2024

Opt. Lett.

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A high-performance 5-junction cascade quantum dot (QD) vertical cavity surface-emitting laser (VCSEL) with 1.3 µm wavelength was designed. The characteristics of the QD as active regions and tunnel junctions are combined to effectively increase output power. The photoelectric characteristics of single-junction, 3-junction cascade, and 5-junction cascade QD VCSELs are compared at continuous-wave conditions. Results indicate that the threshold current gradually decreases, and the output power and slope efficiency exponential increase with the increase of the number of active regions. The peak power conversion efficiency of 58.4% is achieved for the 5-junction cascade individual QD VCSEL emitter with 10 µm oxide aperture. The maximum slope efficiency of the device is 6.27 W/A, which is approximately six times than that of the single-junction QD VCSEL. The output power of the 5-junction cascade QD VCSEL reaches 188.13 mW at injection current 30 mA. High-performance multi-junction cascade 1.3-µm QD VCSEL provides data and theoretical support for the preparation of epitaxial materials.

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Simulation of a Single-Mode Tunnel-Junction-Based Long-Wavelength VCSEL

Cited by 2 publications

References 19 publications

The Electron Stopper Layer Effect on Long-Wavelength VCSEL with AsSb-Based DBR Temperature Distribution

The Electron Stopper Layer Effect on Long-Wavelength VCSEL with AsSb-Based DBR Temperature Distribution

High-performance multi-junction cascade 1.3 µm quantum dot vertical cavity surface-emitting laser

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