No abstract

No abstract

No abstract

ABSTRACT-In this study, we have theoretically investigated the effect of electron stopper layer on internal temperature distribution of high performance vertical cavity surface-emitting laser emitting at 1305 nm. Simulation software PICS3D, which selfconsistently combines the 3D simulation of carrier transport, self-heating, gain computation and wave-guiding, was used. Simulation results show that change the electron stopper layer properties affect the internal temperature distribution of the device. The temperature of the active region increases compared with the original device. Comparison of temperature distribution in devices with different electron stopper layer confirms that optimized structure operates at maximum temperature.

In this paper, a numerical study of barrier characterization effects on the hightemperature internal performance of an InGaAsP multi-quantum well laser is presented. The softwareused for this purpose self-consistently combines the threedimensional simulation of carrier transports, self-heating, and optical waveguiding. The laser model calculates all relevant physical mechanisms, including their dependence on temperature and local carrier density. The results have shown that the proposed laser, which operates at 1325 nm, suffers from electron leakage. The electron leakage current decreases by reducing the barrier thickness. Although tensile strain barriers lead to improved laser optical behavior, it increases leakage current because of electron nonuniformity.