Thermal simulation of InP-based 1.3μm vertical cavity surface emitting laser with AsSb-based DBRs

Kaftroudi, Zahra Danesh; Rajaei, Esfandiar

doi:10.1016/j.optcom.2010.08.044

Cited by 8 publications

(14 citation statements)

References 18 publications

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“…It also shows that, maximum temperature is located in active region. These figures show that the active region temperature increases about 13°C compared with original design [22]. The maximum internal temperature, which is caused by the heat generated inside the device, is raised up to 413.883 K, 414.507 K and 415.253 K in the active region for devices with 10 nm, 15 nm and 20 nm ESL thicknesses, respectively.…”

Section: Discussion Of the Results Of Simulationsmentioning

confidence: 88%

“…In our previous work, the electron stopper layer effects on the device performance were investigated and the optimum layer properties were obtained [22]. Here, we studied the effect of the ESL on the device temperature distribution.…”

Section: Discussion Of the Results Of Simulationsmentioning

confidence: 99%

“…16) has fallen slightly in comparison with the three first devices which mentioned above. The temperature distribution of optimum device [22] is plotted in Fig. 17.…”

Section: Discussion Of the Results Of Simulationsmentioning

confidence: 99%

“…In prior study, we explained the effect of AlInAs electron stopper layer on the first above room temperature continuous wave lasing of 1305 nm InP-Based VCSEL implementing AsSb-based DBR performance [22]. In this paper, for the first time, the effects of AlInAs electron stopper layer properties on internal temperature distribution are investigated.…”

Section: Introductionmentioning

confidence: 95%

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The Electron Stopper Layer Effect on Long-Wavelength VCSEL with AsSb-Based DBR Temperature Distribution

Kaftroudi¹,

Rajaei

2017

IJOP

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ABSTRACT-In this study, we have theoretically investigated the effect of electron stopper layer on internal temperature distribution of high performance vertical cavity surface-emitting laser emitting at 1305 nm. Simulation software PICS3D, which selfconsistently combines the 3D simulation of carrier transport, self-heating, gain computation and wave-guiding, was used. Simulation results show that change the electron stopper layer properties affect the internal temperature distribution of the device. The temperature of the active region increases compared with the original device. Comparison of temperature distribution in devices with different electron stopper layer confirms that optimized structure operates at maximum temperature.

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Section: Discussion Of the Results Of Simulationsmentioning

confidence: 88%

Section: Discussion Of the Results Of Simulationsmentioning

confidence: 99%

“…16) has fallen slightly in comparison with the three first devices which mentioned above. The temperature distribution of optimum device [22] is plotted in Fig. 17.…”

Section: Discussion Of the Results Of Simulationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 95%

See 2 more Smart Citations

The Electron Stopper Layer Effect on Long-Wavelength VCSEL with AsSb-Based DBR Temperature Distribution

Kaftroudi¹,

Rajaei

2017

IJOP

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“…A high power VCSEL with the maximum continuous wave optical output of 46 mW at room temperature was reported [7] , and various studies on thermal fields were presented in Refs. [8][9][10][11][12][13]. However, the influence of proton implanted depth on threshold thermal fields and other characteristics of VCSELs were not given in these studies.…”

mentioning

confidence: 99%

Threshold control in VCSELs by proton implanted depth

Zhao

Sun

Wang

et al. 2011

Optoelectron. Lett.

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The proton implantation is one of key procedures to confine the current diffusion in vertical cavity surface emitting lasers (VCSELs), in which the proton implanted depth and profile are main parameters. Threshold characteristics of VCSELs with various proton implanted depths are studied after optical, electrical and thermal fields have been simulated self-consistently in three dimensions. It is found that for VCSELs with confinement radius of 2 m, increasing proton implanted depth can reduce the injected current threshold power and enhance the laser temperature in active region. Numerical results also indicate that there are optimal values for current aperture in proton implanted VCSELs. The minimum injected current threshold can be achieved in VCSELs with proton implantation near the active region and confinement radius of 1.5 m, while the VCSELs with proton implantation in the middle of p-type distributed Bragg reflectors (DBRs) and confinement radius of 2.5 m can realize the minimum temperature.VCSELs are widely used for optical communications and interconnections because of the grteatly improved far-field divergence angle [1][2][3][4] . Proton implantation and selective oxide have been used to confine the laser threshold current [5,6] . The proton implanted depth and profile are two main parameters to affect the threshold current in VCSELs. A high power VCSEL with the maximum continuous wave optical output of 46 mW at room temperature was reported [7] , and various studies on thermal fields were presented in Refs. [8][9][10][11][12][13]. However, the influence of proton implanted depth on threshold thermal fields and other characteristics of VCSELs were not given in these studies.The purpose of this work is to find the optimal threshold current in VCSELs for different implanted depths.The laser is sandwiched between a pair of p and n type DBRs consisting of 20 and 27 alternating quarter-wavelength layers of AlAs and Al 0.16 Ga 0.84 As, respectively. The active region is made up of three undoped In 0.2 Ga 0.8 As quantum wells (QWs) separated by the 100 Å GaAs layer. The thickness of QW is 80 Å. In our simulation, the device is fabricated by using the H + implantation for lateral current confinement, and the potential satisfies Poisson's equation in substrate, p type and n type DBRs. 2 2 2 2 , , 1 , z z r V r z r V r r z r V .(1)The injected current density iswhere is conductivity. The carrier density N diffusion in the active region can be written aswhere d is the thickness of active region, and D n is the diffusion constant. The optical transverse i-mode i (r) in VCSELs is governed by 0 ) ( ) ( 1 2 2 2 0 2 0 r r m k r r r r r i z i i .(4)The steady-state thermal conduction equation in the laser is written as, ( ) , ( 1 l 2 2 z r Q z z r T r z r T r r r i .

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Effect of temperature on $$\mathbf{In}_{{\varvec{x}}} \mathbf{Ga}_{1-{{\varvec{x}}}} \mathbf{As}/\mathbf{GaAs}$$ In x Ga 1 - x As / GaAs quantum dots

Borji¹,

Reyahi²,

Rajaei³

et al. 2017

Pramana - J Phys

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Thermal simulation of InP-based 1.3μm vertical cavity surface emitting laser with AsSb-based DBRs

Cited by 8 publications

References 18 publications

The Electron Stopper Layer Effect on Long-Wavelength VCSEL with AsSb-Based DBR Temperature Distribution

The Electron Stopper Layer Effect on Long-Wavelength VCSEL with AsSb-Based DBR Temperature Distribution

Threshold control in VCSELs by proton implanted depth

Effect of temperature on $$\mathbf{In}_{{\varvec{x}}} \mathbf{Ga}_{1-{{\varvec{x}}}} \mathbf{As}/\mathbf{GaAs}$$ In x Ga 1 - x As / GaAs quantum dots

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