Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates

Bahat‐Treidel, Eldad; Sidorov, V.; Würfl, Joachim; Tränkle, G.

doi:10.1007/978-3-211-72861-1_66

Cited by 10 publications

(8 citation statements)

References 6 publications

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“…Bahat-Treidel et al [20] has reported on the simulations of AlGaN/GaN HEMT breakdown voltage. However, it is debatable whether to adopt the Albrecht low field mobility model, which is not very accurate for III-N compounds.…”

Section: Breakdown Characteristicsmentioning

confidence: 99%

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Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

Kong¹,

Ke²,

Liu³

et al. 2012

Chinese Phys. B

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In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications.

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Section: Breakdown Characteristicsmentioning

confidence: 99%

“…In Ref. [20], it was proposed that grating field plates could enhance the AlGaN/GaN HEMT breakdown voltage, which can also be ascribed to the extension of equipotential lines. The difference is that grating field plates provide multiple sources to extend the equipotential lines.…”

Section: Breakdown Characteristicsmentioning

confidence: 99%

Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

Kong¹,

Ke²,

Liu³

et al. 2012

Chinese Phys. B

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show abstract

“…In the future we will be able to calibrate the models more thoroughly with those results. An extensive calibration process has been performed by Bahat-Treidel 5 and that process highlights some of the more critical models that can be used for more accurate results. We have followed those recommendations in lieu of device results for now.…”

Section: Device Structure and Simulation Methodologymentioning

confidence: 99%

“…In order to accommodate device scale, breakdown is alternatively defined as the voltage at which the drain leakage current exceeds 1 mA/mm. 5,22,23 The definition used for breakdown voltage in our simulations has been modified further to include area factor. This change is necessary to accommodate how the plot of breakdown current will change shape when altering lateral dimensions.…”

Section: Simulation Methodology and Simulationmentioning

confidence: 99%

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

Binder

Khan

Yang

et al. 2019

ECS J. Solid State Sci. Technol.

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This paper presents a fabless design approach focusing on the impact of heterostructure design on the performance of low voltage GaN power HEMTs. Compared to the standard high voltage design process, low voltage design (<100 V) comes with a unique set of challenges especially concerning breakdown rules. Low voltage simulations reveal less dependence on vertical leakage current and substrate breakdown compared to high voltage designs, and more reliance on buffer leakage and punch-through as the dominant factors leading to breakdown. To analyze the impact of heterostructure design on the device performance, optimization curves are presented for breakdown voltage, on-state resistance, and gate charge. Simulations are performed in Sentaurus TCAD and correlated to known existing experimental results where possible. Trends are presented for the optimization of the channel layer thickness, barrier layer thickness and molar fraction, and impact of an AlN interlayer.

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“…et al first proposed the FP-G and achieved a high V BD of 570 V, but resulting in severe degradation of frequency characteristics [6]. Since then, multiple grating FP-G [7,8] and novel FP-G structures [9,10] have been invented to reduce the frequency 2 of 11 degradation. Relevant analytical models [11,12] and reliability improvement [13] were also reported, providing a deeper insight into the relationship between FPs and V BD .…”

Section: Introductionmentioning

confidence: 99%

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

et al. 2019

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A 2-D simulation of off-state breakdown voltage (VBD) for AlGaN/GaN high electron mobility transistors (HEMTs) with multi field-plates (FPs) is presented in this paper. The effect of geometrical variables of FP and insulator layer on electric field distribution and VBD are investigated systematically. The FPs can modulate the potential lines and distribution of an electric field, and the insulator layer would influence the modulation effect of FPs. In addition, we designed a structure of HEMT which simultaneously contains gate FP, source FP and drain FP. It is found that the VBD of AlGaN/GaN HEMTs can be improved greatly with the corporation of gate FP, source FP and drain FP. We achieved the highest VBD in the HEMT contained with three FPs by optimizing the structural parameters including length of FPs, thickness of FPs, and insulator layer. For HEMT with three FPs, FP-S alleviates the concentration of the electric field more effectively. When the length of the source FP is 24 μm and the insulator thickness between the FP-S and the AlGaN surface is 1950 nm, corresponding to the average electric field of about 3 MV/cm at the channel, VBD reaches 2200 V. More importantly, the 2D simulation model is based on a real HMET device and will provide guidance for the design of a practical device.

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Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates

Cited by 10 publications

References 6 publications

Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

Effects of Heterostructure Design on Performance for Low Voltage GaN Power HEMTs

Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate

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