Simulation of device parameters of high efficiency multicrystalline silicon solar cells

Abstract

The results of the simulation of the reported experimental results of high effi ciency multicrystalline silicon (mc-Si) solar cells, using PC1D software, are reported in this study. Results obtained by various groups have been incorporated and compared in this study. The highest effi ciency reported so far for mc-Si solar cells is 20•4% and 17-18% by research laboratories and commercial houses, respectively. The effi ciency can be further enhanced if passivation characteristics on both the front and back surface are improved. The role of back surface recombination has become more signifi cant in light of the use of thin mc-Si wafers by the solar cell industry. Based on the passivation characteristics and considering the understanding of the past three decades of studies, the authors have proposed and simulated a structure for mc-Si solar cells to improve the performance of the same. The results of our modeled structure of mc-Si solar cell show an effi ciency of 21•88% with short-circuit current density, J sc = 39•39 mA/cm 2 , and open circuit voltage, V oc = 0•666 V.

Role of surface recombination in multi-crystalline silicon solar cells

“…The V oc value decreases with the increase of surface recombination. For high V oc the recombination should be 10 3 cm/s [6]. Unlike I sc , the V oc does not approach saturations recombination speed becomes smaller but rises continuously and it is shown in fig 2(b).…”

Study the Role of Effective Parameters in Enhancement of the Silicon Solar Cell Performance Using Pc1d Simulation

“…This attributed to that the effect of BSRV in high minority carrier lifetime solar cells is bigger because the generation rate becomes higher at the back surface. While the minority carriers which are generated close to the back surface are not able to reach the junction if the wafer is thick enough [17]. In accord with BRRV range, the total impact on efficiency is limited (~ 1 % absolute reduction in efficiency).…”