Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

Abstract

Short channel effects, such as DIBL are compared for SOI-FinFETs with different silicon body geometries. The original device considered was straight without narrowing at the top and a set of devices that exhibit the mentioned narrowing, up to the extreme case where the top of the gate has no surface and so the body cross-section is essentially a triangle. We have studied five different variations from the original geometry of a 25 nm gate length SOI-FinFET device with 1.5 nm thick oxide layer. The P-type channel had a doping concentration of 10 15 cm −3 and n-type S/D areas are doped at concentrations of 10 20 cm −3 . The silicon body of the device accordingly had a height of 30 nm and a width of 12 nm. Simulation results show the source-drain barrier decreasing with increasing the upper body thickness. The DIBL effect of the considered FinFETs depends on upper body thickness, tending to increase with thicker upper body widths. Results of a comparison of two devices with different shapes but with the same cross-sectional area shows the relationship mainly depends on the shape rather than the cross-section area of the device body.

Влияние формы канала на амплитуду случайных телеграфных шумов в подпороговой области беспереходного FinFET-транзистора

“…В то же время технологические флуктуации геометрических размеров могут приводить к заметному изменению ожидаемых параметров и характеристик транзистора. Так, в работах [12][13][14] показана зависимость изменения характеристик, параметров и короткоканальных эффектов от изменения формы канала и размеров FinFET-транзистора, работающего в инверсной моде. В настоящей работе моделируется зависимость амплитуды СТШ-сигнала, индуцированного единичным зарядом, захваченным на граничном дефекте в центре потолка канала JL FinFET-транзистора с различной формой канала, изготовленного на основе технологии " кремний на изоляторе" (КНИ), структура которого представлена на рис.…”

The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

“…However, these fluctuations can lead to significant variation of the transistor parameters and characteristics. In particular, it was established [12][13][14] that variations of the characteristics, parameters, and short-channel effects depend on the cannel (fin) shape and dimensions of FinFETs operating in the inversion mode.…”