Simulation of gate switching characteristics of a miniaturized MOSFET based on a non-isothermal non-equilibrium transport model

Abstract

Our device simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy -Transport Model(TCETM). The simulator has the ability to calculate not only steady-state characteristics but also transient characteristics of a MOSFET. It solves basic semiconductor devices equations including Poisson equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method.