Hirobumi Kawashima scite author profile

Our device simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy -Transport Model(TCETM). The simulator has the ability to calculate not only steady-state characteristics but also transient characteristics of a MOSFET. It solves basic semiconductor devices equations including Poisson equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method.

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Hirobumi Kawashima

Influence of Layout and Packaging on the Temperature of GaAs Power PHEMTs

Thermal breakdown simulation of Si MOSFET taking account of thermal interdependence

Simulation of gate switching characteristics of a miniaturized MOSFET based on a non-isothermal non-equilibrium transport model

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