Simulation of growth dynamics for nearly epitaxial films

Thickness dependent structural, optical and electrical properties of Ti-doped ZnO films prepared by atomic layer deposition

“…To obtain more insight into possible mechanisms we performed growth simulations in the same manner as explained in refs. [18][19][20][21], using two different types of polyhedra, which are visualized in Figure S2.…”

Evolution of Crystal Structure During the Initial Stages of ZnO Atomic Layer Deposition

“…For example, in ZnO thin films, a particular crystallographic texture may be beneficial for gaining optimal piezoelectric behavior or enhanced velocities in surface acoustic wave devices, and the photoluminescence properties can be determined by the strain within the film . However, these properties can be very difficult to predict a priori , because they are dependent on a variety of growth parameters . This has led to several recent studies in which researchers employ new in situ tools able to penetrate into the reactive ALD environment and directly probe growth behavior. − …”

“…7 However, these properties can be very difficult to predict a priori, because they are dependent on a variety of growth parameters. 8 This has led to several recent studies in which researchers employ new in situ tools able to penetrate into the reactive ALD environment and directly probe growth behavior. 9−16 Here, we report a detailed study on the evolution of crystalline texture and strain during the initial growth of a binary oxide by ALD, utilizing a custom-built chamber that permits use of a variety of in situ synchrotron X-ray techniques.…”

Influence of Substrate Orientation and Oxygen Partial Pressure on the Morphology, Structure, and Electrical Property of Epitaxial Indium Tin Oxide Films

“…Moreover, the ITO (111) film has a flat and dense surface, with truncated triangular grains of 200–300 nm diameters in some locations. In general, for the low-temperature deposition process, the relative growth rates of different crystal planes play a decisive role in the crystallite morphologies; however, under the deposition condition of high temperature, crystallite morphology is determined by the surface energies based on Wulff’s construction. , According to the research results of Zhang et al, the sequence of surface energies for low-index surfaces of In 2 O 3 is γ (100) > γ (110) > γ (111) , and the In 2 O 3 grains are inclined to be bounded by {111} crystal planes because of the surface energy minimization theory …”