2013
DOI: 10.1108/compel-09-2012-0160
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Simulation of linear dynamic macro model of photo catalytic sensor in SPICE

Abstract: Purpose -The flow injection analysis (FIA) technique by Yoon-Chang Kim et al. for the determination of chemical oxygen demand (COD) involves the complete analysis including sampling and washing. FIA is analytical method for the measurement of COD using photochemical column. This method uses a bulky setup and takes 10-15 minutes to get the output result which is a tedious and time-consuming job. If conventional method is continuously used for a long time, then it is stable only for 15 days. The purpose of this … Show more

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Cited by 21 publications
(14 citation statements)
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“…To overcome these limitations and make the application faster a Simulation Program with Integrated Circuit Emphasis (SPICE) model for PCS was developed. 8 With the advancements in semiconductor technology and the use of SPICE model one can minimize the size of the overall system, increase the reliability and make it more user friendly.…”
Section: Pcs Macro Modelmentioning
confidence: 99%
“…To overcome these limitations and make the application faster a Simulation Program with Integrated Circuit Emphasis (SPICE) model for PCS was developed. 8 With the advancements in semiconductor technology and the use of SPICE model one can minimize the size of the overall system, increase the reliability and make it more user friendly.…”
Section: Pcs Macro Modelmentioning
confidence: 99%
“…To address this problem, a SPICE model for PCS is introduced by Whig and Ahmad, which is more user friendly and has less response time [3]. The circuit previously designed is not suitable for the multiple input PCS one of the major reason is that there are as many input reference electrodes are needed as the number of input sensors are increased, in other words the circuit is not suitable for the multiple input sensors network [4]. To deal with such a problem a new circuit is implemented with the facility of multiple inputs using only the single reference electrode and few active components.…”
Section: Introductionmentioning
confidence: 99%
“…In the submicron level the thickness of gate oxide is very minor in dimension. As the aspect of gate oxide decreases this result in tunnelling of charge carriers which significantly increases the leakage current of MOSFETS and results in the decrease of device reliability [3,4]. One way to remain tumbling dimensions is possible by using materials having much sophisticated permittivity than silicon dioxide.…”
Section: Introductionmentioning
confidence: 99%