Simulation of MoS<sub>2</sub> stacked nanosheet field effect transistor

Shen, Yang; Tian, He; Ren, Tian‐Ling

doi:10.1088/1674-4926/43/8/082002

Cited by 8 publications

(5 citation statements)

References 19 publications

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“…Transition metal dichalcogenides (TMDs), such as MoSe 2 and WSe 2 , are promising candidates in novel high-performance nanoelectronic and optoelectronic devices due to their alluring properties. − In general, intrinsic defects and unintentional impurities during the growth of the materials are unavoidable, and they dramatically affect the physical and chemical properties of the materials. − On the other hand, the functionality of semiconductors depends essentially on whether enough free carriers can be introduced by doping. ,− Therefore, the prerequisite for designing and optimizing high-performance devices is to have deep understanding of the properties of defects in materials.…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe₂ and WSe₂

et al. 2022

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Monolayer (ML) MoSe2 and WSe2 are promising materials for novel two-dimensional high-performance electronic and optoelectronic devices. Although ML MoSe2 and WSe2 possess the same crystal structure and similar chemical composition and band gap, they are experimentally observed to have distinct carrier types in conduction, i.e., ML MoSe2 is usually a n-type and ML WSe2 usually a p-type semiconductor. The reasons for such distinction are not fully understood so far. In this paper, by first-principles systematic investigation of the properties of intrinsic point defects and some inevitable unintentional extrinsic impurities under normal growth environments for ML MoSe2 and WSe2, we find that intrinsic defects are neither efficient p-type nor n-type dopants in these materials. Instead, hydrogen interstitial (H i inside ) is a shallow donor in both ML MoSe2 and WSe2, while nitrogen-substituting host selenium (N Se ) is a relatively shallow acceptor in both ML MoSe2 and WSe2. However, in the presence of both H and N doping, the compensation between the two type dopants pinned the Fermi energy close to the conduction band edge for ML MoSe2 and close to the valence band edge for ML WSe2. Our study, therefore, provides insights into the origin of the distinct types of conduction of ML MoSe2 and WSe2 and provides guidelines on how to dope transition metal dichalcogenides.

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Section: Introductionmentioning

confidence: 99%

First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe₂ and WSe₂

et al. 2022

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“…Transition metal dichalcogenides (general structural formula MX 2 ) are emerging 2D materials constructed by transition metal M (such as Mo, W, Hf, Ta, Nb) and chalcogen elements (such as S, Se, Te) through intra-layer covalent bonding in the form of X-M-X, resembling a sandwich structure, and the material is kept stable by van der Waals forces between layers (Figure 1a). [13,14] TMDCs generally exhibit three typical structural phases: the 1T phase (tetragonal symmetry), the 2H phase (hexagonal symmetry), and the 3R phase (rhombohedral symmetry). Among them, the 2H phase is most studied due to its more robust stability under general conditions than the 1T and 3R phases (Figure 1b).…”

Section: Introductionmentioning

confidence: 99%

Emerging Frontiers of 2D Transition Metal Dichalcogenides in Photovoltaics Solar Cell

Zhou,

Lv,

Tan

et al. 2024

Adv Funct Materials

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Two‐dimensional (2D) transition metal dichalcogenides (TMDCs) have gained much attention due to their excellent electronic and optoelectronic properties. The reasonable band gap, higher light‐matter interaction, hundreds of categories as well as wafer‐scale growth and Si‐compatible fabrication etc. proof their immense potential for next‐generation solar cells. Over the past years, a variety of specific device structure are investigated including multi‐field tunable 2D TMDCs‐based photovoltaic solar cell since its electronic structure is easily tunable. Their work function distributes in a wide range which facilitate interfacial modulation and optimize the electron/hole transfer layer in perovskite‐/organic‐based photovoltaic solar cell. In this review, the recent developments of TMDCs in photovoltaic solar cell are comprehensively described. First, the energy diagram of traditional semiconductor and 2D TDMCs are discussed. Then, 2D TMDCs‐based photovoltaic solar cell is introduced considering the homojunction, heterojunction and Schottky‐junction as well as their multi‐field tunability. Third, the role of 2D TMDCs layer as photosensitive layer and modifying layer in silicon‐based solar cells, as well as their applications in perovskite‐/organic‐based solar cells are summarized considering their role of electron/hole transfer layer or active layer. Lastly, the prospect for future materials, device and process trends and practical applications of TMDCs‐based photovoltaic solar cell are presented.

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“…Chung et al [7], Xiong et al [11], Mathew et al [14], lee et al [15], Chen et al, [16] and Shen et al [17] reported NSFET based on TMD/MoS 2 with good performance metrics such as ON to OFF current ratio greater than 10 8 and high ON currents. However, these metrics are outside the range of predicted metrics as per the IRDS projections.…”

Section: Introductionmentioning

confidence: 99%

Design and performance analysis of double gate vertically stacked MoS₂ nanosheet field effect transistor

Rudravaram,

Shukla,

Satish

2024

Phys. Scr.

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In this work we report a vertically stacked nanosheet Field Effect Transistor (NSFET) in double gate configuration using transition metal dichalcogenide (TMD) based molybdenum disulphide (MoS2) as the conducting channel. The performance of the NSFET is analysed for number of channels, different channel thickness, different source/drain contacts. The performance of the device at different temperatures (T) also analysed. The proposed NSFET with three vertically stacked channels, exhibits a ON current (ION) of 30.6 µA/µm, Subthreshold swing (SS) of 69 mV/dec and ON to OFF current ratio of more than 108 at Vds=1V. Further the ION can be improved with multi-layer channel thickness. The performance of the vertically stacked MoS2 NSFET in junction less (JL) and inversion mode (IM) is compared, it is concluded from the simulations that JL vertically stacked MoS2 NSFET more immune to short channel effects such as threshold voltage (Vth) roll-off and drain induced barrier lowering (DIBL).

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Simulation of MoS₂ stacked nanosheet field effect transistor

Cited by 8 publications

References 19 publications

First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe₂ and WSe₂

First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe₂ and WSe₂

Emerging Frontiers of 2D Transition Metal Dichalcogenides in Photovoltaics Solar Cell

Design and performance analysis of double gate vertically stacked MoS₂ nanosheet field effect transistor

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Simulation of MoS2 stacked nanosheet field effect transistor

Cited by 8 publications

References 19 publications

First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe2 and WSe2

First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe2 and WSe2

Emerging Frontiers of 2D Transition Metal Dichalcogenides in Photovoltaics Solar Cell

Design and performance analysis of double gate vertically stacked MoS2 nanosheet field effect transistor

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Simulation of MoS₂ stacked nanosheet field effect transistor

First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe₂ and WSe₂

First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe₂ and WSe₂

Design and performance analysis of double gate vertically stacked MoS₂ nanosheet field effect transistor