Simulation of multiplying electron distribution in electron multiplier layer for EBAPS

Piao, Xue; Shi, Feng; Song, Jae Hee; Li, Ye; Duanmu, Qingduo; Liu, Chunyang; De, Song

doi:10.1117/12.2249736

Cited by 3 publications

(1 citation statement)

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“…To obtain the distribution of the secondary electrons, some studies have also measured the scattering properties of high energy electrons in a EBCMOS electron multiplier layer. [22]- [24]. A backscattered electron that is emitted into the vacuum will be injected into the BSB-CMOS as an incident electron, due to the proximity-focusing electrostatic field.…”

Section: Introductionmentioning

confidence: 99%

Characterising Backscattered Electrons in EBCMOS

Wang

Jiao³

et al. 2022

IEEE Photonics J.

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The characteristics of backscattered electrons near the surface of a back-side bombarded CMOS (BSB-CMOS) within an electron bombarded CMOS (EBCMOS) were studied based on the principle of electron-solid interactions and Monte-Carlo simulation method. We mainly focused on the angular distributions of backscattered electrons, the ratio of backscattered electron number to incident electron number (RBI), and the distribution of the distance between backscattered electrons and incident electrons (DBI). We studied how these characteristics were affected by the BSB-CMOS surface structure and incident electron energy. Firstly, RBI and the mean DBI vary with the incident electron energy, the surface material type, and passivation layer thickness. Meanwhile, a lower RBI may reduce device noise originating from backscattered electrons (NBE) due to the smaller number of backscattered electrons. Besides, the lower mean DBI may enhance the device resolution, because the backscattered electron beam is more concentrated. The distribution of backscattered azimuths (ΦB) and the backscattered angle (θB) follow uniform distribution and cosine angular distribution respectively, which are difficult to change. Finally, devices with the lowest RBI and a low mean value of DBI were achieved when the BSB-CMOS surface was modified with 60 nm Al2O3 and the incident electrons were at 4 keV, which might improve the NBE and resolution of the EBCMOS. This study will provide a theoretical foundation for the fabrication of high-resolution EBCMOS.

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Section: Introductionmentioning

confidence: 99%

Characterising Backscattered Electrons in EBCMOS

Wang

Jiao³

et al. 2022

IEEE Photonics J.

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Effects of H+ ion bombardment on GaAs photocathode surface with Cs-O and Cs-F activation layers

Zhang,

Wang

et al. 2023

Journal of Vacuum Science &Amp; Technology B

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To characterize the degree of damage to the GaAs photocathode surface caused by H+ ion back bombardment in the electron-bombarded complementary metal–oxide–semiconductor (EBCMOS), Stopping Range of Ions in Matter software based on the Monte Carlo method was used to investigate the effect of H+ ions with different incident energies on the surface of Cs-O (Cs-F) activated GaAs photocathode. During the simulations, different Cs/O (Cs/F) ratios ranging from 1:1 to 4:1 were considered. The sputtering rates, backscattering electrons, and longitudinal and lateral displacements along with vacancies/ions were investigated. According to the analysis of sputtering rates and vacancies, the optimal Cs/O ratio and Cs/F ratio are 3:1 and 4:1, respectively. With the increase in the incident energy, the backscattering rates decrease, the peak value of the H+ ion distribution decreases, while the corresponding peak position increases, and the peak value of the vacancy distribution increases first and then decreases, while the corresponding peak position increases. In addition, the projected ranges, and lateral and longitudinal displacements increase with the increase in incident energies, while the projected ranges may far exceed the straggle lengths and make the ion trajectory become more and more concentrated in the high incident energy region. This work helps to understand the degeneration mechanism of the GaAs photocathode operating in EBCMOS.

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