Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

Granzner, Ralf; Polyakov, V. M.; Schwierz, Frank; Kittler, M.; Luyken, R.J.; Rosner, W.; Städele, M.

doi:10.1016/j.mee.2005.08.003

Cited by 94 publications

(30 citation statements)

References 19 publications

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“…It is frequently argued that in MOSFETs with sub-100-nm gates the DD model does no longer provide a sufficiently correct description of carrier transport due to the appearance of nonstationary and/or quasi-ballistic transport effects. We have demonstrated, however, that the standard DD model is well suited for the simulation of Si MOSFETs with gate length down to 30 nm, and by assuming a modified gate-length-dependent saturation velocity it provides reasonable results even down to 5 nm gate length [35]. Moreover, it has been shown that carrier transport in 2D MoS 2 MOSFETs with 10-nm, and even sub-10-nm, channels is still far from ballistic but dissipative and scattering-dominated instead [36][37][38].…”

Section: Transport Modelmentioning

confidence: 97%

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

et al. 2016

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An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency f T and the maximum frequency of oscillation f max of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated f T of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel) with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher f max compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

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Section: Transport Modelmentioning

confidence: 97%

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

et al. 2016

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“…The mobility of TFT materials is of great interest because it influences several performance metrics, such as current density, energy efficiency, switching delay and cutoff or transit frequency (f T ), a critical parameter for realizing GHz wireless connectivity. At low electric fields, the intrinsic f T ¼ mE DS /(2pL), where L is the transistor channel length and E DS is the drain-source lateral electric field described by E DS ¼ V DS /L within the gradual channel approximation 36 . V DS is the drain-source voltage.…”

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confidence: 99%

Two-dimensional flexible nanoelectronics

2014

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represents the tenth anniversary of modern graphene research. Over this decade, graphene has proven to be attractive for thin-film transistors owing to its remarkable electronic, optical, mechanical and thermal properties. Even its major drawback-zero bandgap-has resulted in something positive: a resurgence of interest in two-dimensional semiconductors, such as dichalcogenides and buckled nanomaterials with sizeable bandgaps. With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.T wo-dimensional (2D) atomic sheets are atomically thin, layered crystalline solids with the defining characteristics of intralayer covalent bonding and interlayer van der Waals bonding 1-3 . The expanding portfolio of atomic sheets illustrated in Fig. 1a currently include the archetypical 2D crystal graphene 3-14 , transition metal dichalcogenides (TMDs) 1,2,15-21 , diatomic hexagonal boron nitride (h-BN) 3,[22][23][24][25] , and emerging monoatomic buckled crystals collectively termed Xenes, which include silicene 2,26,27 , germanene 2 and phosphorene [28][29][30][31] . These materials are considered 2D because they represent the thinnest unsupported crystalline solids that can be realized, possess no dangling surface bonds and show superior intralayer (versus interlayer) transport of fundamental excitations (charge, heat, spin and light). The portfolio is expected to grow as more elemental and compound sheets are uncovered.The outstanding properties of 2D crystals have generated immense interest for both conventional semiconductor technology and the nascent flexible nanotechnology because, amongst other considerations, these atomic sheets afford the ultimate thickness scalability desired in a variety of essential material categories, including semiconductors, insulators, transparent conductors and transducers 3,16,18 . In particular, flexible nanoelectronics stand to greatly benefit from the development of 2D crystals because their unmatched combination of device physics and device mechanics is accessible on soft polymeric or plastic substrates 17,18,32,33 , which can enable the long sought after large-area high-performance flexible devices that can be manufactured at economically viable scales. As a result, existing flexible technology is expected to be transformed from low-cost commodity applications, such as radio-frequency identification tags and sensors, to integrated nanosystems with electronic performance comparable to silicon devices, in addition to affording mechanical flexibility and manufacturing form-factor beyond the capability of conventional semiconductor technology 34 . Hence, a new era in integrated flexible technology founded on 2D crystals is emerging.

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“…The contact resisitvity value chosen for the simulations is 1.45 × 10 −7 Ω · cm 2 . Calibrated drift-diffusion models are used for all the technology nodes [12]. For the mobility, we have used the "Lombardi" model with calibrated TABLE I DIMENSIONS USED FOR 3-D BULK FINFET SIMULATIONS model parameters.…”

Section: Tcad Tool Calibrationmentioning

confidence: 99%

Device Design and Optimization Considerations for Bulk FinFETs

Manoj

Nagpal

Varghese

et al. 2008

IEEE Trans. Electron Devices

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Abstract-Fabrication of FinFETs using bulk CMOS instead of silicon on insulator (SOI) technology is of utmost interest as it reduces the process costs. Using well-calibrated device models and 3-D mixed mode simulations, we show that bulk FinFETs can be optimized with identical performances as that of SOI FinFETs. Optimized bulk FinFETs are compared with the corresponding SOI FinFETs for a range of technology nodes using an extensive simulation and design methodology. Further, we extend the concept of body doping in bulk FinFETs to the case of lightly doped fins unlike the heavily doped fin cases reported earlier. The optimum body doping required for bulk FinFETs, and its multiple advantages are also systematically evaluated. We also show that device parasitics play a crucial role in the optimization of nanoscale bulk FinFETs.

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Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

Cited by 94 publications

References 19 publications

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Two-dimensional flexible nanoelectronics

Device Design and Optimization Considerations for Bulk FinFETs

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