Simulation of Phosphorus Implantation into Silicon with a Single Parameter Electronic Stopping Power Model

Abstract

We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized into a globally averaged effective charge Z * 1 , and a local charge density dependent electronic stopping power for a proton. There is only a single adjustable parameter in the model, namely the one electron radius r 0 s which controls Z * 1 . By fine tuning this parameter, we obtain excellent agreement between simulated dopant profiles and the SIMS data over a wide range of energies for the channeling case. Our work provides a further example of implant species, in addition to boron and arsenic, to verify the validity of the electronic stopping power model and to illustrate its generality for studies of physical processes involving electronic stopping.

Improved binary collision approximation ion implant simulators

“…For crystalline targets we compare our simulation results directly with secondary ion mass spectroscopy ͑SIMS͒ experimental profiles obtained from the literature. 16,21,32,42 Figures 8-10 show boron implanted into silicon for several energies and implant conditions and they show good agreement with experiments that include very low energy ͑Fig. 8͒, channeling conditions ͑Fig.…”

Scaling behavior of the penetration depth of energetic silver clusters in graphite

“…In this last reference, it was suggested that a ''recovery'' of the deepest damage layers takes place during the hightemperature annealing, in order to explain the difference between experiments and simulations. This hypothesis was tested experimentally by annealing at three different temperatures in the case of the Ag 7 Ϫ experiments, 19 and the experiments indeed confirm that annealing takes place. To correct for the annealing effect, the STM distributions can be fitted to Gaussian functions 19 so that the upper edge of the distribution can be defined.…”

“…6͑a͒-͑c͒ we plot the simulation results for typical trajectories of Ag 7 , Ag 15 , and Ag 50 , re-spectively, at an impact energy of 5 keV. The function K z (z) for Ag 7 and Ag 15 has a quadraticlike dependence, whereas for Ag 50 the function seems to be close to linear over the range Ϫ5 -15 Å. Figure 6͑d͒ also shows a near linear behavior of K z (z) over most of the trajectory of an Ag 147 cluster with an impact energy of 15 keV.…”

Simulation of ion-track ranges in uranium oxide

“…These two ingredients represent the standard features of the REED-MD algorithm; more detailed descriptions can be found in Ref. [3,13,14]. Recently REED-MD has been parallelized with standard MPI (Message Passing Interface) [4], and ions of up to ∼ 100 MeV can be handled with adequate statistics when about 10 4 initial ions are simulated.…”