It is crucial to have a good phenomenological model of electronic stopping power for modeling the physics of ion implantation into crystalline silicon. In the spirit of the Brandt-Kitagawa effective charge theory, we develop a model for electronic stopping power for an ion, which can be factorized into (i) a globally averaged effective charge taking into account effects of close and distant collisions by target electrons with the ion, and (ii) a local charge density dependent electronic stopping power for a proton. This phenomenological model is implemented into both molecular dynamics and Monte Carlo simulations. There is only one free parameter in the model, namely, the one electron radius r • s for unbound electrons. By fine tuning this parameter, it is shown that the model can work successfully for both boron and arsenic implants. We report that the results of the dopant profile simulation for both species are in excellent agreement with the experimental profiles measured by secondary-ion mass spectrometry (SIMS) over a wide range of energies and with different incident directions. We point out that the model has wide applicability, for it captures the correct physics of electronic stopping in ion implantation. This model also provides a good physically-based damping mechanism for molecular dynamics simulations in the electronic stopping power regime, as evidenced by the striking agreement of dopant profiles calculated in our molecular dynamics simulations with the SIMS data.

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A high current relativistic electron beam incident on a high-Z target to produce bremsstrahlung photons for radiographic applications can be subjected to charge neutralization by target plasma ion production due to energy deposition by the electron beam. This partial charge neutralization can lead to premature focusing of the electron beam at a distance away from the target and subsequent radial divergence. Furthermore, as the ion column continues to expand, the focal point moves upstream along the path of the electron beam, causing the beam spot on the target to grow in time. The increase in radiation spot size is detrimental to the spatial resolution of radiographic images. The ion effects were confirmed via particle-in-cell simulations and analysis, and methods were investigated to suppress the growth of the electron beam spot size in single- and multiple-pulse radiographic applications. The concept of a self-biased target was proposed and validated by computer simulation showing that the electron beam can be used in a configuration to establish an electric potential between the target and the collimator. This potential can effectively trap the ions, limit the ion column length, and thereby maintain the electron beam spot size. Another approach is the placement of a thin metallic foil at 1–2 cm in front of the target, which serves as a barrier to the ions but is essentially transparent to the incoming electron beam. Our study also showed that optimized confinement of plasma ions with the electromagnetic or the mechanical method can provide an additional ion-focusing effect which leads to a desirable further reduction of the beam spot size.

We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized into a globally averaged effective charge Z * 1 , and a local charge density dependent electronic stopping power for a proton. There is only a single adjustable parameter in the model, namely the one electron radius r 0 s which controls Z * 1 . By fine tuning this parameter, we obtain excellent agreement between simulated dopant profiles and the SIMS data over a wide range of energies for the channeling case. Our work provides a further example of implant species, in addition to boron and arsenic, to verify the validity of the electronic stopping power model and to illustrate its generality for studies of physical processes involving electronic stopping.