Simulation of proximity and contact lithography

Meliorisz, Balint; Evanschitzky, Peter; Erdmann, Andreas

doi:10.1016/j.mee.2007.01.125

Cited by 12 publications

(6 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For simulating the exposure process, we use the software GenISys LAB [36][37][38]. To obtain the aerial image, the software calculates the Rayleigh-Sommerfeld diffraction integral, using the thin-element approximation for the binary intensity mask.…”

Section: Optimization Routinementioning

confidence: 99%

Computational rule-based approach for corner correction of non-Manhattan geometries in mask aligner photolithography

et al. 2019

View full text Add to dashboard Cite

In proximity mask aligner photolithography, diffraction of light at the mask pattern is the predominant source for image shape distortions such as line end shortening and corner rounding. One established method to mitigate the impact of diffraction is optical proximity correction. This method relies on a deliberate sub-resolution modification of photomask features to counteract such shape distortions, with the goal to improve pattern fidelity and uniformity of printed features. While previously considered for masks featuring only rectangular shapes in horizontal or vertical orientation, called Manhatten geometries, we demonstrate here the capabilities of computational mask aligner lithography by extending optical proximity correction to non-Manhattan geometries. We combine a rigorous simulation method for light propagation with a particle-swarm optimization to identify suitable mask patterns adapt to each occurring feature in the mask. The improvement in pattern quality is demonstrated in experimental prints. Our method extends the use of proximity lithography in optical manufacturing, as required in a multitude of micro-optical devices.

show abstract

Section: Optimization Routinementioning

confidence: 99%

Computational rule-based approach for corner correction of non-Manhattan geometries in mask aligner photolithography

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Finally, one inverse fast Fourier transform step is required to obtain the spatial distribution of the diffraction field in the resist. This calculation method is demonstrated to have fast computation speed with relatively high accuracy [7].…”

Section: Theorymentioning

confidence: 99%

Simulation of 3D inclined/rotated UV lithography and its application to microneedles

Liu

Roeder

Aygün

et al. 2012

Optik

Self Cite

View full text Add to dashboard Cite

a b s t r a c tA 3D model is set up to simulate the exposure process of inclined/rotated UV lithography for negative SU-8 resists. The formation of inclined resist pillars and microstructures with truncated cone shapes is simulated based on a 3D exposure model in combination with a post exposure bake model for chemically amplified resists and the Mack development model. As one of the interesting applications employing this promising lithography technique for MEMS fabrication, a solid microneedle for drug delivery is simulated.

show abstract

“…It appears that near-field diffraction is relatively strong when proximity printing at this distance. Several researchers have put efforts in the simulation of proximity printing, such as, [35][36][37][38] but they did not address on the issues of diffraction effect. This paper is aimed to derive a general formulation to describe such effects for annulus apertures.…”

Section: Introductionmentioning

confidence: 99%

Analysis of irradiance distribution in optical proximity printing of micro annulus apertures

Tsai¹,

Sie²,

Fan³

2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The linear stability of equilibria of charged particles moving near a compact object with a dipole magnetic field and a pseudo-Newtonian potential is analyzed detailedly. An optimal fourth-order force gradient symplectic method, as a global symplectic integrator that can simultaneously solve both the equations of motion and the variational equations, is used to calculate fast Lyapunov indicators. In this way, dynamical structures are described, and parameter domains for causing chaos are found. PACS numbers: 05.45.-a, 04.70.-s, 05.10.-a, 95.10.Fh

show abstract

Simulation of proximity and contact lithography

Cited by 12 publications

References 5 publications

Computational rule-based approach for corner correction of non-Manhattan geometries in mask aligner photolithography

Computational rule-based approach for corner correction of non-Manhattan geometries in mask aligner photolithography

Simulation of 3D inclined/rotated UV lithography and its application to microneedles

Analysis of irradiance distribution in optical proximity printing of micro annulus apertures

Contact Info

Product

Resources

About