Simulation of silicon carbide power MOSFETs at high temperature

Shams, S.F.; Sundaram, Kalpathy B.; Chow, L. C.

doi:10.1016/s0038-1101(98)00264-0

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…11 and 12, are also marked in by them that the critical power dissipation capability of IGBT was ten times higher than of the bipolar transistor,~2000 kW/cm 2 . Presently, there is an intensive quest for new materials like SiC [38][39][40][41][42][43][44], specially 4H-SiC for high-temperature electronics. Superior material properties such as a small dielectric constant, high energy band gap, thermal conductivity and carrier saturation velocity along with chemical inertness and refractory nature, have made SiC a viable alternative to Si and GaAs for high-temperature device operation.…”

Section: Igbt Cell Resultsmentioning

confidence: 99%

Physical Insight into Thermal Behaviour of Power DMOSFET and IGBT: A Two-Dimensional Computer Simulation Study

Khanna

Kumar

Maj

et al. 2001

phys. stat. sol. (a)

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To acquire a physical understanding of the influence of temperature on the electrical characteristics of power DMOSFET (double-diffused metal-oxide-semiconductor field effect transistor) and IGBT (insulated gate bipolar transistor), and to understand their failure mechanisms, a comprehensive thermal characterization of DMOSFET and IGBT unit cells of various structural parameters and impurity diffusion profiles has been carried out as a function of lattice temperature, encompassing the broad temperature range from 200 to 600 K. Device electrical characteristics have been generated in the steady-state forward conduction, blocking and transfer modes of operation using the computer program ISE-TCAD tools and incorporating the relevant temperature-dependent physical models of carrier transport properties and recombination mechanisms during the analysis. This computer-aided analysis has revealed that at a given temperature, within their respective operating ranges, for a particular forward voltage, the IGBT cell always yielded a much higher current than its DMOSFET cell counterpart. DMOSFET behaviour has been found to be maintained from 200 to 450 K with changes in terminal electrical parameters like ON-resistance, transconductance, saturated drain current, threshold voltage, blocking voltage and leakage current. On the contrary, IGBT cells have shown to be capable of working up to 600 K, much higher than and in striking dissimilarity to the DMOSFET cells. Unlike the DMOSFET cell characteristic, the IGBT cell forward characteristics did not fail completely with temperature. Their partial failure has been observed as a more rapid increase in current at a given voltage so that the curve for higher temperature intersected the one at lower temperature. The current density of failure has been found to decrease with increasing temperature. This was ascribed to latching of the parasitic bipolar thyristor. In addition, a moderate variation of IGBT cell forward characteristics with temperature has been observed, distinguishing them from DMOS-FET cells. Further, the transfer characteristic of the IGBT cell has not exhibited collector current saturation at high gate voltages. This saturation behaviour was a notable feature of the DMOSFET cell with the current saturation level depending on temperature. The simulated results have been interpreted in terms of the physics of device operation by invoking the power DMOSFET ON-resistance model, and combinational bipolar transistor-DMOSFET model of the IGBT. Physical explanation of the higher operating temperature capability of IGBT involves the simultaneous action of oppositely-directed thermally varying forward voltage drops in the p-i-n rectifier and the DMOSFET. The simulation study has also established that a distinct correlation of the maximum safe operating temperature with device structural and profile design parameters was possible for the IGBT but was not so apparent for the DMOSFET, making it an inherent device property. Controllability of latching current density and hence pe...

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Section: Igbt Cell Resultsmentioning

confidence: 99%

Physical Insight into Thermal Behaviour of Power DMOSFET and IGBT: A Two-Dimensional Computer Simulation Study

Khanna

Kumar

Maj

et al. 2001

phys. stat. sol. (a)

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“…is required to support a given breakdown voltage V B and depletion width W (cm) at the breakdown can be calculated as follows (Shams, 1998):…”

Section: Contact Resistancementioning

confidence: 99%

Cryo Power and Heat Transfer

Chow¹,

Bass²,

Du³

et al. 2004

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“…The fabricated ACCUFET device had a 350 V blocking voltage with a specific on resistance of 18 mΩ/cm 2 at room temperature with a gate bias of 5 V and an accumulation channel mobility of 125 cm 2 /V.s. The vertical DIMOS structure has been numerically modelled in 4H-SiC and 6H-SiC to analyse their high temperature performance [42]. The ultimate electrothermal limit of a typical 4H-SiC UMOSFET device and the influence of electrothermal effects on UMOS cell geometry optimisation have been numerically modelled using fully coupled electrothermal TCAD simulations [43].…”

Section: Power Transistors: Mosfet'smentioning

confidence: 99%