Simulation of Silicon Solar Cell Using PC1D

Jiang, Chuan; Li, Tian Ze; Zhang, Xia; Hou, Luan

doi:10.4028/www.scientific.net/amr.383-390.7032

Cited by 12 publications

(7 citation statements)

References 5 publications

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“…The highest values were (4.49 𝐴 𝑎𝑛𝑑 0.75 𝑉) respectively at (10 19 𝑐𝑚 −3 ), while the p-type doping concentration was held constant at (10 16 𝑐𝑚 −3 ). The same outcomes were obtained, which were (2.3 𝐴 𝑎𝑛𝑑 0.68 𝑉) at (10 19 𝑐𝑚 −3 ) in [14,15]. Larger doping concentrations result in increased carrier recombination or a decreased minority carrier lifetime.…”

Section: Figure 3: I-v Characteristic Relation For Various Dopingsupporting

confidence: 68%

“…The External Quantum Efficiency can be noticed in the Figure (5). The curve is gradually lowered by increasing thickness from the emitter level of n-type, and a similar pattern can be seen in [15]. A number of parameters, such as fill factor and efficiency, would be computed to demonstrate the performance of the solar cell.…”

Section: Figure 3: I-v Characteristic Relation For Various Dopingmentioning

confidence: 69%

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Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation

Shwan,

Ghafoor

2024

Tikrit J. Pure Sci.

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Energy from renewable sources has developed significantly in the past few decades. Photovoltaics have played a crucial role in the technology employed to generate this type of energy. Technicians and researchers can benefit from systems that offer knowledge and data on the efficiency and performance of solar cells. In this work the I-V characteristic of photovoltaic of silicon was measured, and the influence of different n-type thicknesses was examined with their different doping concentration; this has been done by PC1D simulation, It would be appropriate for developing silicon single-layer without cost. The n-layer thickness and n-region doping are the factors responsible for a solar cell's efficiency and performance. In this context silicon is the ideal candidate due to the swift increase in their efficiency, and its dependability and stability. In the end, to draw a conclusion around the ideal parameters that a good solar cell has to have, the optimum external quantum efficiencies obtained from this design were (87.71 %) for mono layer front surfaces. The results from these simulation studies prove that it is possible to propose these design parameters for mono layer solar cell fabrication. By adjusting the effectively mentioned parameters, a great efficient and I-V characteristic solar cell has been achieved.

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Section: Figure 3: I-v Characteristic Relation For Various Dopingsupporting

confidence: 68%

Section: Figure 3: I-v Characteristic Relation For Various Dopingmentioning

confidence: 69%

Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation

Shwan,

Ghafoor

2024

Tikrit J. Pure Sci.

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“…In this study, simulations were performed to examine the influence of various electrical and physical parameters on the performance of a mono crystalline Si solar cell by using Personal Computer One Dimensional (PC1D) software simulation program. Despite the fact that there are many other free and commercial software programs for simulating specific devices, for this study PC1D was selected [11,12]. This program was developed in Australia at the University of South Wales in Sydney.…”

Section: Introductionmentioning

confidence: 99%

On the Performance Limits for Mono Crystalline Silicon Solar Cells: A Comparative Study

AL-SULTAN

ALTINOLUK>

2022

Mugla Journal of Science and Technology

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In this study the solar cell parameters depending on semiconductor material’s electrical and physical properties were simulated and optimized with high accuracy and with a short simulation time. In order to obtain highly efficient solar cells in theory, later on for practical applications, Personal Computer One Dimensional (PC1D) software simulation program was used. The parameters were the thickness of emitter and absorber layers, type of absorber layer, doping profile, antireflective coating (ARC) materials and surface texturing. The results observed with the optimized parameters were compared and verified with the experimental results in the literature.

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“…There is software, such as PC1D, AFORS-HET and SCAPS, which can be used for simulation of the solar cell [23][24][25][26][27][28][29]. PC1D is numerical simulation software that is used to simulate solar cells.…”

Section: Introductionmentioning

confidence: 99%

Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells

Singh¹,

Gupta²

2022

Semicond. Sci. Technol.

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In this work, c-Si solar cell with double GaAs/Si heterojunction layers has been simulated by the PC1D simulation software. Optimization of thickness and doping concentration of different layers of solar cell is done. Impact of six different anti reflection coatings (ARCs) on Solar cell efficiency has been investigated. Texturing of front surface is done before studying the effect of anti reflection coatings. Simulation shows increase in efficiency around 1.87 % is achieved after applying anti reflection coating of optimum thickness. Double layer anti reflection coatings show the maximum efficiency solar cell 17.41 % which was about 15.54% without coating. Effects of anti reflection coatings on the voltage, current, efficiency and reflectance are also studied in this paper for wavelength range of 250nm to 1200nm. Maximum voltage, current and efficiency for cell is achieve when thickness of anti reflection coatings optimized for wavelength of 600nm.

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Simulation of Silicon Solar Cell Using PC1D

Cited by 12 publications

References 5 publications

Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation

Study the Effect of Doping and Thickness on I-V characteristic of Silicon Solar Cells Using PC1D Simulation

On the Performance Limits for Mono Crystalline Silicon Solar Cells: A Comparative Study

Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells

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