Simulation of structure evolution in Cu films

Chung, Chia-Jeng; Field, David P.; Park, No-Jin; Johnson, Ross G.

doi:10.1016/j.tsf.2008.11.068

Cited by 9 publications

(13 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…After Cu deposition, part of the substrates were annealed at 580 °C and 2 Â 10 -7 Torr for a period of 8 h to minimize the Cu surface roughness. 52,55 Following the annealing procedure, the samples were carefully removed from the tray holder of the e-beam evaporator and broken into a number of pieces for further spectrometric measurements. Between the spectroscopic measurements, the samples were kept at ambient conditions (i.e., room temperature and ∼60% relative humidity).…”

Section: Sample Preparationmentioning

confidence: 99%

Formation of Ultrasmooth and Highly Stable Copper Surfaces through Annealing and Self-Assembly of Organic Monolayers

Platzman¹,

Saguy²,

Brener³

et al. 2009

Langmuir

View full text Add to dashboard Cite

Copper (Cu) has been extensively used as an interconnect material for microelectronic devices because of its high electrical and thermal conductivity and excellent electromigration resistance. However, the formation of relatively rough Cu surfaces ( approximately 5 nm roughness) and Cu-oxide layers upon exposure to air still hinders their reliable application in a wide range of fields. In this article, we show the potential values of highly stable and ultrasmooth polycrystalline bare Cu obtained by simple annealing and chemical modification for a wide range of Cu-based electronic devices. The morphological properties and oxidation behavior of annealed Cu surfaces, before and after coating by self-assembled monolayers of terephthalic acid (TPA), were examined upon exposure to ambient air conditions ( approximately 110 days). Thin films of polycrystalline Cu, deposited on top of an adhesion layer of tantalum nitride (TaN) and annealed for 8 h at 580 degrees C under 2 x 10(-7) Torr, provided ultrasmooth Cu surfaces (R(rms) = 0.15-1.1 nm for fresh samples) and had a stable Cu-oxide layer after 65 days ( approximately 3.5 nm). These observations were perceived to be superior to nonannealed polycrystalline Cu samples. Coating fresh (oxide-free) samples of ultrasmooth Cu with TPA molecules created a closely packed monolayer with a standing-up phase configuration and molecular coverage of approximately 90%. The TPA-coated Cu surface has not shown any detectable oxidation during the first 2 weeks of exposure. The protection efficiency of this layer was found to be superior to those reported earlier on polycrystalline Cu surfaces. The oxidation mechanisms of both annealed and nonannealed Cu surfaces are presented and discussed.

show abstract

Section: Sample Preparationmentioning

confidence: 99%

Formation of Ultrasmooth and Highly Stable Copper Surfaces through Annealing and Self-Assembly of Organic Monolayers

Platzman¹,

Saguy²,

Brener³

et al. 2009

Langmuir

View full text Add to dashboard Cite

show abstract

“…Our results show no such structures. In a previous paper, 28 twin formation occurred by the brute-force method. Twins grains were arbitrarily inserted into the structure at preselected conditions to achieve the desired structure evolution.…”

Section: Discussionmentioning

confidence: 99%

Evolution of Annealing Twins in Sputtered Cu Films

Yoon

Field

2009

Journal of Elec Materi

View full text Add to dashboard Cite

The Monte Carlo Potts model with n-fold method was used to simulate grain structure evolution in thin Cu films according to energetic competition principles. Surface/interface, grain boundary, and strain energy factors were applied to determine grain growth and crystallographic texture evolution as a function of film thickness. Furthermore, annealing twins were simulated through specific criteria that arbitrarily insert twin grains into the structure through grain boundary energy considerations. Four different types of microstructures were observed experimentally and simulated by the Monte Carlo technique.

show abstract

“…[20][21][22][23] Whole cluster decomposition and atomic diffusion on the substrate were characterized as function of density profiles and deformation parameters. [20][21][22][23] Whole cluster decomposition and atomic diffusion on the substrate were characterized as function of density profiles and deformation parameters.…”

Section: Structure Evolution Of Zn Cluster On Graphene For Zno Nanostmentioning

confidence: 99%

Structure evolution of Zn cluster on graphene for ZnO nanostructure growth

Guo

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

Monte Carlo simulations are carried out for Zn cluster supported on a suspended graphene to estimate the morphological evolution of the following growth of ZnO nanostructure. The metalmetal interactions are modeled with the tight-binding many-body potential and a Lennard-Jones potential is used to describe the metal-carbon interactions. The dynamic processes of Zn cluster in the temperature field decomposing and drifting effects are visualized through the simulation. Zn atoms make one regular atomic single layer on the graphene sheet at a relatively low temperature, which would act as orderly and high density catalytic nucleation sites. In the relatively high temperature, the Zn atomic single layer falls to pieces, the orderly and low density catalytic nucleation sites are formed. It is expected from these behaviors that the buffer layer of graphene provide a sound explanation for the formation of ordered orientated ZnO nanostructure.

show abstract

Simulation of structure evolution in Cu films

Cited by 9 publications

References 26 publications

Formation of Ultrasmooth and Highly Stable Copper Surfaces through Annealing and Self-Assembly of Organic Monolayers

Formation of Ultrasmooth and Highly Stable Copper Surfaces through Annealing and Self-Assembly of Organic Monolayers

Evolution of Annealing Twins in Sputtered Cu Films

Structure evolution of Zn cluster on graphene for ZnO nanostructure growth

Contact Info

Product

Resources

About