Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT

Abstract

Simulations and measurements of submicron pseudomorphic high electron mobility transistors (HEMT's) are presented. For the simulations the generic device simulator MINIMOS-NT is used which is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations. A description of the structure of the simulator is given, which shows the basic idea of splitting the device geometry into distinct regions. Within these "segments," arbitrary material properties and physical models, i.e., partial differential equations, can be defined independently. The segments are linked together by interface models which account for the interface conditions. The simulated characteristics of a HEMT with a gate length of 240 nm are compared with the measured data. Essential physical effects which determine the behavior of the device can be identified in the output and transfer characteristics.

A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation

“…As a particular example the electrical behavior of SiGe HBT was studied with our two-dimensional device simulator MINIMOS-NT [13] at different temperatures using a hydrodynamic transport model. Our investigations were performed in a comparative way for different dopant species and concentrations using the new models and the old ones.…”

The backward Monte Carlo method for semiconductor device simulation

“…The transfer characteristics have been calculated using the classical device simulator Minimos-NT [15,16], the conven- tional FMC method, and the novel BMC method. Each bias point is calculated with 10 6 trajectories, both in the backward and forward methods.…”

Normally-Off AlGaN/GaN HEMTs with InGaN cap layer: A simulation study

“…We further assess the impact of thermionic emission and field emission (tunneling) effects which determine the current transport across the heterojunctions. The energy barrier reduction is modeled based on the electric field perpendicular to the interface and the effective tunneling length [8].…”