Simulation of substrate hot-electron injection

Pagaduan, F. E.; Yang, Cary Y.; Toyabe, T.; Nishioka, Yasushiro; Hamada, A.; Igura, Yasuo; Takeda, Eiji

doi:10.1109/16.52434

Cited by 2 publications

(2 citation statements)

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“…This explains our observed emission from the junction under negative bias only (Figure b). With applied bias voltage, the electric field and I 1 rise, creating hot electrons leading to emission events that feed two plasmonic modes asymmetrically . Light emission originating from I 1 feeds both the hybrid-plasmon mode (via inelastic current tunneling) and the surface plasmon (via elastically tunneling hot electrons) (Figure a). , The hybrid plasmon mode inside the junction is hidden from sight unless accessed otherwise (i.e., scattered out) .…”

Section: Resultsmentioning

confidence: 99%

“…With applied bias voltage, the electric field and I 1 rise, creating hot electrons leading to emission events that feed two plasmonic modes asymmetrically. 32 Light emission originating from I 1 feeds both the hybrid-plasmon mode (via inelastic current tunneling) and the surface plasmon (via elastically tunneling hot electrons) (Figure 2a). 19,33 The hybrid plasmon mode inside the junction is hidden from sight unless accessed otherwise (i.e., scattered out).…”

Section: Acs Photonicsmentioning

confidence: 99%

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Electrical-Driven Plasmon Source of Silicon Based on Quantum Tunneling

2018

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An efficient silicon-based light source presents an unreached goal in the field of photonics, due to Silicon's indirect electronic band structure preventing direct carrier recombination and subsequent photon emission. Here we utilize inelastically tunneling electrons to demonstrate an electrically-driven light emitting silicon-based tunnel junction operating at room temperature. We show that such a junction is a source for plasmons driven by the electrical tunnel current. We find that the emission spectrum is not given by the quantum condition where the emission frequency would be proportional to the applied voltage, but the spectrum is determined by the spectral overlap between the energy-dependent tunnel current and the modal dispersion of the plasmon. Experimentally we find the highest light outcoupling efficiency corresponding to the skin-depth of the metallic contact of this metalinsulator-semiconductor junction. Distinct from LEDs, the temporal response of this tunnel source is not governed by nanosecond carrier lifetimes known to semiconductors, but rather by the tunnel event itself and Heisenberg's uncertainty principle.

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