Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect

Abstract

Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis (MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset (SEU) effect, including the deposited energy, traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of 209Bi have a wider distribution of energy deposition than 132Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer (LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.

Investigation of flux dependent sensitivity on single event effect in memory devices

“…Single event effects (SEEs) have become increasingly important as the feature size of the microelectronic devices continue scaling down. [1][2][3] Tremendous efforts, both experimental and theoretical, have been invested into this field to study the basic mechanism of the effects. Particle flux is an important experimental parameter in ground based irradiation tests.…”